4H-SiC ultraviolet avalanche photodetectors with low breakdown voltage and high gain

Solid-State Electronics

Volumn 53, Issue 1, 2009, Pages 7-10

  Zhu, Huili ^a   Chen, Xiaping ^a   Cai, Jiafa ^a   Wu, Zhengyun ^a  

^a XIAMEN UNIVERSITY   (China)

Author keywords

4H SiC; Avalanche photodetectors (APDs); Ultraviolet

Indexed keywords

AVALANCHES (SNOWSLIDES); ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; IONIZATION OF GASES; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SEMICONDUCTOR QUANTUM DOTS; SILICON CARBIDE; SNOW;

4H-SIC; AVALANCHE BEHAVIORS; AVALANCHE PHOTODETECTORS; AVALANCHE PHOTODETECTORS (APDS); BREAK DOWN VOLTAGES; DETECTIVITY; EXCELLENT PERFORMANCES; EXTERNAL QUANTUM EFFICIENCIES; HIGH GAINS; IDEALITY FACTORS; MAXIMUM EXTERNAL QUANTUM EFFICIENCIES; PEAK RESPONSIVITY; REJECTION RATIOS; RESPONSIVITY; REVERSE BIASES; SPECTRAL RESPONSIVITY; THREE ORDERS OF MAGNITUDES; ULTRA VIOLETS; ULTRAVIOLET; UV DETECTIONS; WAVELENGTH CUT OFFS;

QUANTUM EFFICIENCY;

EID: 57449100233     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.09.002     Document Type: Article

References (14)

1. Yan F., Zhao J.H., and Olsen G.H. Demonstration of the first 4H-SiC avalanche photodiodes. Solid-State Electron 44 (2000) 341-346
2. Ng B., Yan F., David J., Tozer R., Rees G., Qin C., et al. Multiplication and excess noise characteristics of thin 4H-SiC UV avalanche photodiodes. IEEE Photon Technol Lett 14 (2002) 1342-1344
3. Ng B.K., David J.P.R., Tozer R.C., Rees G.J., Yan F., Qin C., et al. Performance of thin 4H-SiC UV avalanche photodiodes. IEE Proc Optoelectron 150 (2003) 187-190
4. Guo X., Beck A., Yang B., and Campbell J.C. Low dark current 4H-SiC avalanche photodiodes. Electron Lett 39 (2003) 1673-1674
5. Isoshima T., Isojima Y., Hakomori K., Kikuchi K., Nagai K., and Nakagawa H. Ultrahigh sensitivity single-photon detector using Si avalanche photodiode for the measurement of ultraweak biochemiluminescence. Rev Sci Instrum 66 4 (1995) 2922-2926
6. Konstantinov A., Wahab Q., Nordell N., and Lindefelt U. Ionization rates and critical fields in 4H silicon carbide. Appl Phys Lett 71 1 (1997) 90-92
7. Yan F., Luo Y., Zhao J.H., and Olsen G.H. 4H-SiC visible blind UV avalanche photodiodes. Electron Lett 35 11 (1999) 929-930
8. 0 positive bevel. Electron Lett 38 7 (2002) 335-336
9. McIntyre R. Multiplication noise in uniform avalanche diodes. IEEE Trans Electron Dev ED-13 (1966) 164-168
10. Guo X., Rowland L.B., Dunne G.T., Fronheiser J.A., Sandvik P.M., et al. Demonstration of ultraviolet separate absorption and multiplication 4H-SiC avalanche photodiodes. IEEE Photon Technol Lett 18 1 (2006) 136-138
11. Sridhara S.G., Eperjesi T.J., Devaty R.P., and Choyke W.J. Penetration depths in the ultraviolet for 4H, 6H and 3C silicon carbide at seven common laser pumping wavelengths. Mater Sci Eng 61-62 (1999) 229-233
12. Guo X., Beck A.L., Li X., Campbell J.C., Emerson D., and Sumakeris J. Study of reverse dark current in 4H-SiC avalanche photodiodes. IEEE J Quant Electron Lett 41 (2005) 562-567
13. Guo X., Beck A.L., Campbell J.C., Emerson D., and Sumakeris J. Spatial nonuniformity of 4H-SiC avalanche photodiodes at high gain. IEEE J Quant Electron Lett 41 (2005) 1213-1216
14. Yan F., Xin X., Aslam S., Zhao Y., Franz D., Zhao J.H., et al. 4H-SiC UV photo detectors with large area and very high specific detectivity. IEEE J Quant Electron 40 9 (2004) 1315-1320