Fabrication and hard X-ray photoemission analysis of photocathodes with sharp solar-blind sensitivity using AlGaN films grown on Si substrates

Applied Surface Science

Volumn 256, Issue 14, 2010, Pages 4442-4446

  Sumiya, Masatomo ^a   Kamo, Yutaro ^b   Ohashi, Naoki ^a   Takeguchi, Masaki ^a   Heo, Yoon Uk ^a   Yoshikawa, Hideki ^a   Ueda, Shigenori ^a   Kobayashi, Keisuke ^a   Nihashi, Tokuaki ^c   Hagino, Minoru ^c   Nakano, Takayuki ^b   Fuke, Shunro ^b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b SHIZUOKA UNIVERSITY   (Japan)

^c Hamamatsu Photonics KK   (Japan)

Author keywords

Hard X ray photoelectron spectroscopy; III V nitride; Photocathode

Indexed keywords

ALUMINUM GALLIUM NITRIDE; ALUMINUM NITRIDE; FIELD EMISSION CATHODES; III-V SEMICONDUCTORS; PHOTOCATHODES; PHOTOELECTRONS; PHOTOEMISSION; PHOTONS; SEMICONDUCTOR ALLOYS; SILICON; SUBSTRATES; WIDE BAND GAP SEMICONDUCTORS; X RAY PHOTOELECTRON SPECTROSCOPY; X RAYS;

ESCAPE PROBABILITY; EXTERNAL QUANTUM EFFICIENCY; HARD X-RAY PHOTOELECTRON SPECTROSCOPY; HARD X-RAY PHOTOEMISSION; III-V NITRIDES; LIGHT IRRADIATIONS; ORDERS OF MAGNITUDE; PHOTO-ELECTRON EMISSION;

NITROGEN COMPOUNDS;

EID: 77950690494     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.01.038     Document Type: Article

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