Solar-blind AlxGa1-xN-based metal-semiconductor-metal ultraviolet photodetectors

Electronics Letters

Volumn 36, Issue 18, 2000, Pages 1581-1583

  Li, Ting ^a   Lambert, D J H ^a   Beck, A L ^a   Collins, C J ^a   Yang, B ^a   Wong, M M ^a   Chowdhury, U ^a   Dupuis, R D ^a   Campbell, J C ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTODIODES; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS;

ALUMINUM GALLIUM NITRIDE;

ULTRAVIOLET DETECTORS;

EID: 0034246287     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20001110     Document Type: Article

References (8)

1. PERNOT, C., HIRANO, A., IWAYA, M., DETCHPROHM, T., AMANO, H., and AKASAKI, I.: 'Solar-blind UV photodetectors based on GaN/ AlGan p-i-n photodiodes', Jpn. J. Appl. Phys. Part 2, 2000, 39, pp. L387-L389
2. PARISH, G., KELLER, S., KOZODOY, P., IBBETSON, J.P., MARCHAND, H., FINI, P.T., FLEISCHER, S.B., DENBAARS, S.P., MISHRA, U.K., and TARSA, E.J.: 'High-performance (Al, Ga) N-based solarblind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN', Appl. Phys. Lett., 1999, 75, pp. 247-249
3. WALKER, D., KUMAR, V., MI, K., SANDVIK, P., KUNG, P., ZHANG, X.H., and RAZEGHI, M.: 'Solar-blind AlGaN photodiodes with very low cutoff wavelength', Appl. Phys. Lett., 2000, 76, pp. 403-405
4. 1-xN-based p-i-n solar-blind ultraviolet photodetectors', submitted to IEEE Trans. Electron Dev., 2000
5. OSINSKY, A., GANGOPADHYAY, S., LIM, B.W., ANWAR, M.Z., KHAN, M.A., KUKSENKOV, D.V., and TEMKIN, H.: 'Schottky barrier photodetectors based on AlGaN', Appl. Phys. Lett., 1998, 72, pp. 742-744
6. OMNÈS, F., MARENCO, N., BEAUMONT, B., DE MIERRY, PH., MONROY, E., CALLE, F., and MUÑOZ, E.: 'Metalorganic vapor-phase epitaxy-grown AlGaN materials for visible-blind ultraviolet photodetector applications', J. Appl. Phys., 1999, 86, pp. 5286-5292
7. MONROY, E., CALLE, F., MUÑOZ, E., and OMNES, F.: 'AlGaN metal-semiconductor-metal photodiodes', Appl. Phys. Lett., 1999, 74, pp. 3401-3403
8. CARRANO, J.C., GRUDOWSKI, P.A., EITING, C.J., DUPUIS, R.D., and CAMPBELL, J.C.: 'Very low dark current metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers', Appl. Phys. Lett., 1997, 70, pp. 1992-1994