The hetero-epitaxial SiCN/Si MSM photodetector for high-temperature deep-UV detecting applications

IEEE Electron Device Letters

Volumn 24, Issue 9, 2003, Pages 565-567

  Chang, Wen Rong ^a   Fang, Yean Kuen ^a   Ting, Shyh Fann ^a   Tsair, Yong Shiuan ^a   Chang, Cheng Nan ^a   Lin, Chun Yu ^a   Chen, Shih Fang ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Hetero epitaxial; MSM; Photodetector; SiCN; UV

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; HIGH TEMPERATURE APPLICATIONS; OPTOELECTRONIC DEVICES; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR METAL BOUNDARIES; ULTRAVIOLET DEVICES;

CUBIC CRYSTALLINE FILM; HETERO-EPITAXIAL PHOTODETECTOR; METAL SEMICONDUCTOR METAL PHOTODETECTOR; RAPID THERMAL CHEMICAL VAPOR DEPOSITION;

PHOTODETECTORS;

EID: 0141452034     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.816577     Document Type: Letter

References (9)

1. M. Razeghi and A. Rogalski, "Semiconductor ultraviolet detectors," J. Appl. Phys., vol. 79, no. 10, pp. 7433-7473, 1996.
2. R. Korde and J. Geist, "Stable, high quantum efficiency, UV-enhanced photodiodes by arsenic diffusion," Solid-State Electron., vol. 30, pp. 89-92, 1987.
3. M. I. Chaudhry, "Electrical transport properties of crystalline silicon carbide/silicon heterojunctions," IEEE Electron Device Lett., vol. 12, pp. 670-672, Nov., 1991.
4. Database, Maintained and Distributed by the International Centre for Diffraction Data (ICDD), Newtown Square, PA, 1999.
5. y with mirror face prepared by RTCVD," ECS Electrochem Solid-State Lett., vol. 4, no. 11, pp. G91-G93, 2001.
6. ____, "Heteroepitaxial silicon-carbide nitride films with different carbon sources on silicon substrates prepared by rapid-thermal chemical-vapor deposition," J. Electron. Mater., vol. 31, no. 12, pp. 1341-1346, 2002.
7. L. C. Chen, C. K. Chen, S. L. Wei, D. M. Bhusari, K. H. Chen, Y. F. Chen ,Y. C. Jong, and Y. S. Huang, "Crystalline silicon carbon nitride: a wide band gap semiconductor," Appl. Phys. Lett., vol. 71, no. 19, pp. 2463-2465, 1998.
8. K. H. Chen, J. J. Wu, C. Y. Wen, L. C. Chen, C. W. Fan, P. F. Kuo, Y.F. Chen, and Y. S. Huang, "Wide band gap silicon carbon nitride films deposited by electron cyclotron resonance plasma chemical vapor deposition," Thin Solid Film, vol. 355-356, pp. 205-209, 1999.
9. J. D. Hwang, Y.K. Fang, K. H. Wu, and S. M. Chou, "Improving breakdown voltage of SiC/Si heterojunction with graded structure by rapid thermal CVD technology," IEEE Trans. Electron Devices, vol. 44, pp. 2029-2031, Nov. 1997.