A β-Ga2O3/GaN Schottky-barrier photodetector

IEEE Photonics Technology Letters

Volumn 23, Issue 7, 2011, Pages 444-446

  Weng, W Y ^a   Hsueh, T J ^b   Chang, S J ^a   Huang, G J ^a   Hsueh, H T ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Ga2O3; dual band; GaN; ultraviolet (UV) photodetector

Indexed keywords

APPLIED BIAS; BI-LAYER; CONTRAST RATIO; DEPLETION DEPTHS; DUAL-BAND; GAN; HETEROSTRUCTURES; OPERATION MODE; SCHOTTKY BARRIERS; SOLAR-BLIND; ULTRA-VIOLET; ULTRAVIOLET (UV) PHOTODETECTOR;

OPTOELECTRONIC DEVICES; PHOTODETECTORS;

GALLIUM NITRIDE;

EID: 79952908287     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2011.2108276     Document Type: Article

References (12)

1. Z. Yu and M. Aceves-Mijares, "A ultraviolet-visible-near infrared pho-todetector using nanocrystalline Si superlattice, " Appl. Phys. Lett., vol. 95, 2009, Article 081101.
2. 1-x N heterojunction p-i-n photodiode, " Appl. Phys. Lett., vol. 80, pp. 3754-3756, 2002.
3. W. Y. Weng, S. J. Chang, W. C. Lai, T. J. Hsueh, S. C. Shei, X. F. Zeng, S. L. Wu, and S. C. Hung, "GaN MSM photodetectors with a semi-insulating Mg-doped AlInN cap layer, " IEEE Photon. Technol. Lett., vol. 21, no. 8, pp. 504-506, Apr. 15, 2009.
4. y- GaN buffer layer, " IEEE J. Quantum Electron., vol. 44, no. 10, pp. 916-921, Oct. 2008.
5. 3 thin films for ultraviolet photodetectors, " Appl. Phys. Lett., vol. 90, 2007, Article 031912.
6. 3 nanowires as solar-blind photodetectors, " Appl. Phys. Lett., vol. 88, 2006, Article 153107.
7. 3 substrates, " Appl. Phys. Express, vol. 1, 2008, Article 011202.
8. 3 nanowire photodetector, " IEEE Photon. Technol. Lett., vol. 22, no. 10, pp. 709-711, May 15, 2010.
9. S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, J. K. Sheu, T. C. Wen, W. C. Lai, J. F. Chen, and J. M. Tsai, "400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes, " IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 4, pp. 744-748, Jul./Aug. 2002. (Pubitemid 35327626)
10. S. J. Chang, W. C. Lai, Y. K. Su, J. F. Chen, C. H. Liu, and U. H. Liaw, "InGaN-GaN multiquantum-well blue and green light-emitting diodes, " IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 2, pp. 278-283, Mar./Apr. 2002. (Pubitemid 34659057)
11. O. Ambacher, M. S. Brandt, R. Dimitrov, T. Metzger, M. Stutzmann, R. A. Fischer, A. Miehr, A. Bergmaier, and G. Dollinger, "Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition, " J. Vac. Sci. Technol. B, vol. 14, pp. 3532-3542, 1996. (Pubitemid 126582729)
12. 0.7 N/GaN heterostructure, " J. Cryst. Growth, vol. 252, pp. 51-57, 2003.