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Applied Physics Letters

Volumn 98, Issue 10, 2011, Pages

High-performance metal-semiconductor-metal InGaN photodetectors using CaF2 as the insulator

(4) Sang, Liwen a Liao, Meiyong a Koide, Yasuo a Sumiya, Masatomo a

a NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; DARK CONDITIONS; DISCRIMINATION RATIO; HIGH QUALITY; METAL SEMICONDUCTOR METAL; METAL SEMICONDUCTOR METAL PHOTODETECTOR; METAL/SEMICONDUCTOR INTERFACE; ORDERS OF MAGNITUDE; RESPONSE TIME; RESPONSIVITY; ULTRAVIOLET ILLUMINATION; VISIBLE LIGHT;

CALCIUM FLUORIDE; ELECTRON INJECTION; GALLIUM COMPOUNDS; OPTOELECTRONIC DEVICES; PHOTODETECTORS;

METALS;

EID: 79952658038 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3562326 Document Type: Article

Times cited : (57)

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