AlGaN/GaN MSM photodetectors with photo-CVD annealed Ni/Au semi-transparent contacts

Semiconductor Science and Technology

Volumn 19, Issue 12, 2004, Pages 1354-1357

  Chang, P C ^a   Chen, C H ^b   Chang, S J ^a   Su, Y K ^a   Yu, C L ^a   Chen, P C ^c   Wang, C H ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHENG SHIU UNIVERSITY   (Taiwan)

^c NAN JEON INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONTACTS; EPITAXIAL GROWTH; SATURATION (MATERIALS COMPOSITION); SEMICONDUCTING ALUMINUM COMPOUNDS; SYNTHESIS (CHEMICAL);

LOW-NOISE PERFORMANCE; PHOTO-CHEMICAL VAPOR DEPOSITION; SATURATION VELOCITY; SEMI-TRANSPARENT CONTACTS;

PHOTODETECTORS;

EID: 10444220273     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/12/004     Document Type: Article

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