High responsivity, bandpass near-UV photodetector fabricated from PVA- In 2O 3 nanoparticles on a GaN substrate

IEEE Photonics Journal

Volumn 4, Issue 3, 2012, Pages 715-720

  Shao, Dali ^a   Qin, Liqiao ^a   Sawyer, Shayla ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

high gain; In 2O 3 nanoparticles; ultraviolet (UV) detection

Indexed keywords

BAND PASS; DEPLETION REGION; FALL TIME; GAN SUBSTRATE; HIGH GAIN; LOW-PASS; PHOTORESPONSIVITY; RESPONSIVITY; RISETIMES; SPECTRAL RESPONSE; TRANSIENT CHARACTERISTIC; ULTRAVIOLET DETECTION;

GALLIUM NITRIDE; PHOTODETECTORS;

NANOPARTICLES;

EID: 84860849827     PISSN: 19430655     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOT.2012.2195485     Document Type: Article

References (16)

1. M. L. Lee, J. K. Sheu, W. C. Lai, Y. K. Su, S. J. Chang, C. J. Kao, C. J. Tun, M. G. Chen, W. H. Chang, G. C. Chi, and J. M. Tsai, BCharacterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer,[ J. Appl. Phys., vol.94, no.3, pp.1753-1757, Aug.2003.
2. S. J. Chang, C. L. Yu, C. H. Chen, P. C. Chang, and K. C. Huang, BNitride-based ultraviolet metal-semiconductor-metal photodetectors with low-temperature GaN cap layers and Ir/Pt contact electrodes,[ J. Vac. Sci. Technol. A, vol.24, no.3, pp.637-640, May2006.
3. A. Balducci, M. Marinelli, E. Milani, M. E. Morgada, A. Tucciarone, G. Verona-Rinati, M. Angelone, and M. Pillon, BExtreme ultraviolet single-crystal diamond detectors by chemical vapor deposition,[ Appl, Phys. Lett., vol.86, no.19, pp.1935091-193509-3, May2005.
4. N. W. Emanetoglu, J. Zhu, Y. Chen, J. Zhong, Y. Chen, and Y. Lu, BSurface acoustic wave ultraviolet photodetectors using epitaxial ZnO multilayers grown onr-plane sapphire,[ Appl. Phys. Lett., vol.85, no.17, pp.3702-3704, Oct.2004.
5. S. Liang, H. Sheng, Y. Liu, Z. Huo, Y. Lu, and H. Shen, BZnO Schottky ultraviolet photodetectors,[ J. Cryst. Growth, vol.225, no.2, pp.110-113, May2001. (Pubitemid 32496059)
6. H. Huang, W. Yang, Y. Xie, X. Chen, and Z. Wu, BMetal-semiconductor-metal ultraviolet photodetectors based on TiO2 films deposited by radio-frequency magnetron sputtering,[ IEEE Electron Device Lett., vol.31, no.6, pp. 588-590, Jun.2010.
7. H. Xue, X. Kong, Z. Liu, C. Liu, J. Zhou, and W. Chen, BTiO2 based metal-semiconductor-metal ultraviolet photodetectors,[ Appl. Phys. Lett., vol.90, no.20, pp.2011181-201118-3, May2007.
8. D. Zhang, C. Li, S. Han, X. Liu, T. Tang, W. Jin, and C. Zhou, BUltraviolet photodetection properties of indium oxide nanowires,[ Appl. Phys., A Mater. Sci. Process., vol.77, no.1, pp.163-166,2003.
9. D. Shao, L. Qin, and S. Sawyer, Optical Properties of Polyvinyl Alcohol (PVA) Coated In2O3 Nanoparticles.
10. L. Qin, C. Shing, S. Sawyer, and P. S. Dutta, BEnhanced ultraviolet sensitivity of zinc oxide nanoparticle photoconductors by surface passivation,[ Opt. Mater., vol.33, no.3, pp.359-362, Jan.2011.
11. P. D. C. King, T. D. Veal, F. Fuchs, C. Y. Wang, D. J. Payne, A. Bourlange, H. Zhang, G. R. Bell, V. Cimalla, O. Ambacher, R. G. Egdell, F. Bechstedt, and C. F. McConville, BBand gap, electronic structure and surface electron accumulation of cubic and rhombohedral In2O3,[ Phys. Rev. B, vol.79, no.20, p.205211, May2009.
12. A. Walsh, J. L. F. Da Silva, S.-H. Wei, C. Korber, A. Klein, L. F. J. Piper, A. DeMasi, K. E. Smith, G. Panaccione, P. Torelli, D. J. Payne, A. Bourlange, and R. G. Egdell, BNature of the band gap of In(2)O(3) revealed by first-principles calculations and X-ray spectroscopy,[ Phys. Rev. Lett., vol.100, no.16, pp.1674021-167402-4, Apr.2008.
13. K. B. Sundaram and G. K. Bhagavat, BPreparation and properties of indium oxide films,[ Phys. Stat. Sol., vol.63, no.1, pp. K15-K18, Jan.1981.
14. E. Monroy, F. Omnes, and F. Calle, BWide-bandgap semiconductor ultraviolet photodetectors,[ Semicond. Sci. Technol., vol.18, no.4, pp. R33-R51, Apr.2003.
15. V. Brinzari, M. Ivanov, B. K. Cho, M. Kamei, and G. Korotcenkov, BPhotoconductivity in In2O3 nanoscale thin films: Interrelation with chemisorbed-type conductometric response towards oxygen,[ Sens. Actuators B, Chem., vol.148, no.2, pp.427-438, Jul.2010.
16. P. D. C. King, T. D. Veal, D. J. Payne, A. Bourlange, R. G. Egdell, and C. F. McConville, BSurface electron accumulation and the charge neutrality level in In2O3,[ Phys. Rev. Lett., vol.101, no.11, pp.1168081-116808-4, Sep.2008.