Solar-blind A1GaN-based p-i-n photodiodes with low dark current and high detectivity

IEEE Photonics Technology Letters

Volumn 16, Issue 7, 2004, Pages 1718-1720

  Biyikli, N ^a   Kimukin, I ^a   Aytur, O ^a   Ozbay, E ^a  

^a BILKENT UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; DARK CURRENT; SAPPHIRE SUBSTRATE; SPECTRAL RESPONSIVITY;

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; GALLIUM NITRIDE; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; PHOTODETECTORS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SUBSTRATES;

PHOTODIODES;

EID: 4344590736     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2004.829526     Document Type: Article

References (18)

1. M. Razeghi and A. Rogalski, "Semiconductor ultraviolet detectors," J. Appl. Phys., vol. 79, pp. 7433-7473, 1996.
2. J. C. Carrano, T. Li, P. A. Grudowski, R. D. Dupuis, and J. C. Campbell, "Improved detection of the invisible," IEEE Circuits Devices Mag., vol. 15, pp. 15-24, Sept. 1999.
3. A. Osinsky, S. Gangopadhyay, B. W. Lim, M. Z. Anwar, M. A. Khan, D. V. Kuksenkov, and H. Temkin, "Schottky barrier photodetectors based on AIGaN," Appl. Phys. Lett., vol. 72, pp. 742-744, 1998.
4. D. Walker, X. Zhang, P. Kung, A. Saxler, S. Javapor, J. Xu, and M. Razeghi, "AlGaN ultraviolet photoconductors grown on sapphire," Appl. Phys. Lett., vol. 68, pp. 2100-2101, 1996.
5. 1-xN-based Schottky barrier photodiodes," J. Appl. Phys., vol. 88, pp. 2081-2091, 2000.
6. V. Adivarahan, G. Simin, G. Tamulaitis, R. Srinivasan, J. Yang, M. A. Khan, M. S. Shur, and R. Gaska, "Indium-silicon codoping of high-aluminum-content AlGaN for solar blind photodetectors," Appl. Phys. Lett., vol. 79, pp. 1903-1905, 2001.
7. M. M. Wong, U. Chowdhury, C. J. Collins, B. Yang, J. C. Denyszyn, K. S. Kim, J. C. Campbell, and R. D. Dupuis, "High quantum efficiency AlGaN/GaN solar-blind photodetectors grown by metalorganic chemical vapor deposition," Phys. Stat. Sol. A, vol. 188, pp. 333-336, 2001.
8. V. V. Kuryatkov, H. Temkin, J. C. Campbell, and R. D. Dupuis, "Low-noise photodetectors based on heterojunctions of AlGaN-GaN," Appl. Phys. Lett., vol. 78, pp. 3340-3342, 2001.
9. N. Biyikli, O. Aytur, I. Kimukin, T. Tut, and E. Ozbay, "Solar-blind AlGaN-based Schottky photodiodes with low noise and high detectivity," Appl. Phys. Lett., vol. 81, pp. 3272-3274, 2002.
10. J. Y. Duboz, J. L. Reverchon, D. Adam, B. Damilano, F. Semond, N. Grandjean, and J. Massies, "High performance solar blind detectors based on AlGaN grown by MBE on Si," Phys. Stat. Sol. A, vol. 188, pp. 325-328, 2001.
11. N. Biyikli, I. Kimukin, T. Kartaloglu, O. Aytur, and E. Ozbay, "High-speed solar-blind photodetectors with indium-tin-oxide Schottky contacts," Appl. Phys. Lett., vol. 82, pp. 2344-2346, 2003.
12. A. Hirano, C. Pernot, M. Iwaya, T. Detchprohm, H. Amano, and I. Akasaki, "Demonstration of flame detection in room light background by solar-blind AlGaN pin photodiode," Phys. Stat. Sol. A, vol. 188, pp. 293-296, 2001.
13. J. D. Brown, Z. Yu, J. Matthews, S. Harney, J. Boney, J. F. Schetzina, J. D. Benson, K. W. Dang, C. Terrill, T. Nohava, W. Yang, and S. Krishnankutty. (1999) Visible-blind UV digital camera based on a 32 × 32 array of GaN/AlGaN p-i-n photodiodes. MRS Internet J. Nitride Semicond. Res. [Online]Article 9
14. 1-x N heterojunction p-i-n photodiodes," Electron. Lett., Vol. 38, pp. 824-826, 2002.
15. N. Biyikli, T. Kartaloglu, O. Aytur, I. Kimukin, and E. Ozbay, "High-speed visible-blind GaN-based indium-tin-oxide Schottky photodiodes," Appl. Phys. Lett., vol. 79, pp. 2838-2840, 2001.
16. N. Biyikli, T. Kartaloglu, O. Aytur, I. Kimukin, and E. Ozbay, (2003) High-performance solar-blind AlGaN Schottky photodiodes. MRS Internet J. Nitride Semicond. Res. [Online]Article 2
17. S. Donati, Photodetectors: Devices, Circuits, and Applications. Englewood Cliffs, NJ: Prentice-Hall, 2000.
18. 0.70 N p-i-n photodiodes," Appl. Phys. Lett., vol. 77,