InGaN-GaN MQW eetal-semiconductor-metal photodiodes with semi-insulating Mg-doped GaN cap layers

IEEE Photonics Technology Letters

Volumn 19, Issue 11, 2007, Pages 846-848

  Yu, C L ^a   Chuang, R W ^a   Chang, S J ^a   Chang, P C ^b   Lee, K H ^a   Lin, J C ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NAN JEON INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

InGaN GaN multiple quantum well (MQW); Mg doped GaN; Photodiodes (PDs)

Indexed keywords

LEAKAGE CURRENTS; OPTICAL FIBER FABRICATION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS;

SEMI-INSULATING LAYER; ULTRAVIOLET-TO-VISIBLE REJECTION RATIO;

PHOTODIODES;

EID: 34249019837     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2007.897432     Document Type: Article

References (20)

1. E. Munoz, E. Monroy, J. L. Pau, F. Calle, F. Omnes, and P. Gibart, "III nitrides and UV detection," J. Phys. Condens. Matter, vol. 13, pp. 7115-7137, 2001.
2. C. Rivera, J. L. Pau, F. B. Naranjo, and E. Munoz, "Novel photodetectors based on InGaN/GaN multiple quantum wells," Phys. Stat. Sol. (a), vol. 201, pp. 2658-2662, 2004.
3. C. Rivera, J. L. Pau, J. Pereiro, and E. Munoz, "Properties of schottky barrier photodiodes ased on InGaN-GaN MQW structures," Superlattices Microstruct., vol. 36, pp. 849-857, 2004.
4. C. Rivera, J. L. Pau, A. Navarro, and E. Munoz, "Photoresponse of (In,Ga)N-GaN multiple-quantum-well structures in the visible and UVA ranges," IEEE J. Quantum Electron., vol. 42, no. 1, pp. 51-58, Jan. 2006.
5. N. Biyikli, I. Kimukin, O. Aytur, and E. Ozbay, "Solar-blind AlGaNbased p-i-n photodiodes with low dark current and high detectivity," IEEE Photon. Technol. Lett., vol. 16, no. 7, pp. 1718-1720, Jul. 2004.
6. 1-x N p-i-n photodiodes," Semicond. Sci. Technol., vol. 19, pp. 1259-1262, 2004.
7. C. Rivera, J. L. Pau, J. Pereiro, and E. Munoz, "Properties of Schottky barrier photodiodes based on InGaN/GaN MQW structures," Superlattices Microstruct., vol. 36, pp. 849-857, 2004.
8. J. K. Kim and J. L. Lee, "GaN MSM ultraviolet photodetectors with transparent and thermally stable RuO2 and IrO2 Schottky contacts," J. Electrochem. Soc., vol. 151, pp. G190-G195, 2004.
9. Y. K. Su, S. J. Chang, C. H. Chen, J. F. Chen, G. C. Chi, J. K. Sheu, W. C. Lai, and J. M. Tsai, "GaN metal-semiconductor-metal ultraviolet sensors with various contact electrodes," IEEE Sensors J., vol. 2, no. 4, pp. 366-371, Aug. 2002.
10. J. P. R. David, Y. H. Chen, R. Grey, G. Hill, P. N. Robson, and P. Kightley, "Effect of misfit dislocations on leakage currents in strained multiquantum well structures," Appl. Phys. Lett., vol. 67, pp. 906-908, 1995.
11. S. Nakamura and G. Fasol, The Blue Laser Diode, 1st ed. Berlin, Germany: Springer-Verlag, 1997, ch. 7.
12. Nagai, Q. S. Zhu, Y. Kawaguchi, K. Hiramatsu, and N. Sawaki, "Hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy," Appl. Phys. Lett., vol. 73, pp. 2024-2026, 1998.
13. L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, J. F. Chen, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, "Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes," IEEE J. Quantum Electron., vol. 38, no. 5, pp. 446-450, May 2002.
14. S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, J. K. Sheu, T. C. Wen, W. C. Lai, J. F. Chen, and J. M. Tsai, "400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes," IEEE J. Sel. Top. Quantum Electron., vol. 8, no. 4, pp. 744-748, Jul./Aug. 2002.
15. J. C. Carrano, T. Li, P. A. Grudowski, C. J. Eting, R. F. Dupuis, and J. C. Campbell, "Current transport mechanism in GaN-based MSM photodetectors," Appl. Phys. Lett., vol. 72, pp. 542-544, 1998.
16. E. G. Brazel, M. A. Chin, and V. Narayanamurti, "Direct observation of localized high current densities in GaN films," Appl. Phys. Lett. vol. 74, pp. 2367-2369.
17. J. K. Sheu, M. L. Lee, and W. C. Lai, "Effect of low-temperature-grown GaN cap layer on reduced leakage current of GaN Schottky diodes," Appl. Phys. Lett., vol. 86, p. 052103, 2005.
18. H. Jiang, N. Nakata, G. Y. Zhao, H. Ishikawa, C. L. Shao, T. Egawa, T. Jimbo, and M. Umeno, "Back-illuminated MSM UV photodetector with high internal gain," Jpn. J. Appl. Phys., vol. 40, pp. L505-L507, 2001.
19. M. Klingenstein, J. Kuhl, J. Rosenzweig, C. Moglestue, A. Hulsmann, J. Schneider, and K. Kohler, "Photocurrent gain mechanisms in metal-semiconductor-metal photodetectors," Solid State Electron., vol. 37, pp. 333-340, 1994.
20. O. Katz, V. Garber, B. Meyler, G. Bahir, and J. Salzman, "Gain mechanism in GaN schottky ultraviolet detectors," Appl. Phys. Lett. vol. 79, pp. 1417-1419, 2001.