Growth of Ga2O3 nanowires and the fabrication of solar-blind photodetector

IEEE Transactions on Nanotechnology

Volumn 10, Issue 5, 2011, Pages 1047-1052

  Weng, W Y ^a   Hsueh, T J ^b   Chang, Shoou Jinn ^a   Huang, G J ^a   Hung, S C ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c SHIH CHIEN UNIVERSITY   (Taiwan)

Author keywords

Ga2O3; nanowires; ultraviolet (UV) photodetectors (PDs)

Indexed keywords

APPLIED BIAS; AVERAGE DIAMETER; AVERAGE LENGTH; CONTACT ELECTRODES; CRYSTAL QUALITIES; GAN/SAPPHIRE; HIGH TEMPERATURE; INCIDENT LIGHT; RESPONSIVITY; SOLAR-BLIND; SOLAR-BLIND PHOTODETECTORS; ULTRAVIOLET (UV) PHOTODETECTORS (PDS);

GALLIUM; OPTOELECTRONIC DEVICES; PHOTODETECTORS;

NANOWIRES;

EID: 80052639553     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2011.2104366     Document Type: Article

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