Towards forming-free resistive switching in oxygen engineered HfO2-x

Applied Physics Letters

Volumn 104, Issue 6, 2014, Pages

  Sharath, S U ^a   Bertaud, T ^b   Kurian, J ^a   Hildebrandt, E ^a   Walczyk, C ^b   Calka, P ^b   Zaumseil, P ^b   Sowinska, M ^b   Walczyk, D ^b   Gloskovskii, A ^c   Schroeder, T ^b,d   Alff, L ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^b IHP   (Germany)

^c DESY   (Germany)

^d BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; FILM GROWTH; HAFNIUM OXIDES; MOLECULAR BEAM EPITAXY; MOLECULAR OXYGEN; OXYGEN; SWITCHING SYSTEMS; THIN FILMS;

BIPOLAR SWITCHING; HARD X-RAY PHOTOELECTRON SPECTROSCOPY; LOW OPERATING CURRENT; LOW POWER APPLICATION; OXYGEN DEFICIENT; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; TIN ELECTRODES;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84900425992     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4864653     Document Type: Article

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