Key concepts behind forming-free resistive switching incorporated with rectifying transport properties

Scientific Reports

Volumn 3, Issue , 2013, Pages

  Shuai, Yao ^a,c   Ou, Xin ^b   Luo, Wenbo ^a   Mücklich, Arndt ^b   Bürger, Danilo ^b   Zhou, Shengqiang ^b   Wu, Chuangui ^a   Chen, Yuanfu ^a   Zhang, Wanli ^a   Helm, Manfred ^b,c   Mikolajick, Thomas ^c   Schmidt, Oliver G ^d,e   Schmidt, Heidemarie ^d,e  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^c DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^d IFW DRESDEN   (Germany)

^e CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84880380852     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep02208     Document Type: Article

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