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Volumn 102, Issue 12, 2013, Pages

Filament observation in metal-oxide resistive switching devices

(6) Celano, Umberto a,b Yin Chen, Yang a,b Wouters, Dirk J a,b Groeseneken, Guido a,b Jurczak, Malgorzata a Vandervorst, Wilfried a,b

a IMEC (Belgium)

b UNIVERSITY OF LEUVEN (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE ATOMIC FORCE MICROSCOPY; CONDUCTIVE FILAMENTS; INNOVATIVE TECHNIQUES; MEMORY STATE; NON-VOLATILE MEMORY; RESISTIVE RANDOM ACCESS MEMORY (RRAM); RESISTIVE STATE; RESISTIVE SWITCHING DEVICES;

ATOMIC FORCE MICROSCOPY; ELECTRIC PROPERTIES; RANDOM ACCESS STORAGE;

ELECTRON EMISSION;

EID: 84875928181 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4798525 Document Type: Article

Times cited : (86)

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