Microscopic model for the kinetics of the reset process in HfO2 RRAM

2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013

Volumn , Issue , 2013, Pages

  Kalantarian, A ^a,b   Bersuker, G ^a   Butcher, B ^a,c   Gilmer, D C ^a   Privitera, S ^d   Lombardo, S ^c   Geer, R ^c   Nishi, Y ^b   Kirsch, P ^a   Jammy, R ^a  

^a SEMATECH   (United States)

^b STANFORD UNIVERSITY   (United States)

^c SUNY POLYTECHNIC INSTITUTE   (United States)

^d Institute for Microelectronics and Microsystems (IMM)   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LEVELS; DETAILED MODELS; HIGH-RESISTANCE STATE; MICROSCOPIC CHARACTERISTICS; MICROSCOPIC MODELS; OXYGEN DIFFUSION; PROCESS KINETICS; TIME DEPENDENT;

KINETICS; MONTE CARLO METHODS; OXYGEN SUPPLY;

HAFNIUM OXIDES;

EID: 84881157381     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSI-TSA.2013.6545582     Document Type: Conference Paper

References (9)

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5. A. Kalantarian, et al., IRPS, April 2012
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8. COMSOL Multiphysics v4.3
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