In-operando and non-destructive analysis of the resistive switching in the Ti/HfO2/TiN-based system by hard x-ray photoelectron spectroscopy

Applied Physics Letters

Volumn 101, Issue 14, 2012, Pages

  Bertaud, Thomas ^a   Sowinska, Malgorzata ^a   Walczyk, Damian ^a   Thiess, Sebastian ^b   Gloskovskii, Andrei ^c   Walczyk, Christian ^a   Schroeder, Thomas ^a,d  

^a IHP   (Germany)

^b DESY   (Germany)

^c JOHANNES GUTENBERG UNIVERSITY   (Germany)

^d BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

HARD X-RAY PHOTOELECTRON SPECTROSCOPY; NON DESTRUCTIVE; OXYGEN RESERVOIR; OXYGEN VACANCY CONCENTRATION; PEAK SHIFT; RESISTIVE SWITCHING; SPACE-CHARGE POTENTIAL; TIO; VALENCE CHANGE; VOLTAGE POLARITY;

HAFNIUM OXIDES; OXYGEN; OXYGEN VACANCIES; PHOTOELECTRONS; REDOX REACTIONS; SWITCHING SYSTEMS; TITANIUM NITRIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

INTERFACE STATES;

EID: 84867545499     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4756897     Document Type: Article

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