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Volumn 110, Issue 5, 2011, Pages

Formation of transition layers at metalperovskite oxide interfaces showing resistive switching behaviors

Author keywords

[No Author keywords available]

Indexed keywords

AL ELECTRODE; CHEMICAL STATE; ELECTRODE MATERIAL; INTERFACIAL REDOX REACTIONS; INTERFACIAL TRANSITION LAYER; OXIDE INTERFACES; REDOX POTENTIALS; RESISTANCE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; SPECTROSCOPIC DATA; TRANSITION LAYERS;

EID: 80052921390     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3631821     Document Type: Conference Paper
Times cited : (28)

References (51)
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    • International Technology Roadmap for Semiconductors (ITRS), 2009 edition. [Online]. Available: http://www.itrs.net/
    • (2009)
  • 4
    • 43549126477 scopus 로고    scopus 로고
    • 10.1016/S1369-7021(08)70119-6
    • A. Sawa, Mater. Today 11, 28 (2008). 10.1016/S1369-7021(08)70119-6
    • (2008) Mater. Today , vol.11 , pp. 28
    • Sawa, A.1
  • 36
    • 33645766287 scopus 로고    scopus 로고
    • 10.1103/PhysRevB.73.155110
    • P. S. Bagus and E. S. Ilton, Phys. Rev. B 73, 155110 (2006). 10.1103/PhysRevB.73.155110
    • (2006) Phys. Rev. B , vol.73 , pp. 155110
    • Bagus, P.S.1    Ilton, E.S.2
  • 39
  • 51
    • 0020473396 scopus 로고
    • 10.1016/0167-2738(84)90148-6
    • F. A. Krger, Solid State Ionics 12, 189 (1984). 10.1016/0167-2738(84) 90148-6
    • (1984) Solid State Ionics , vol.12 , pp. 189
    • Krger, F.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.