Structural properties and electroforming-free resistive switching characteristics of GdOx, TbOx, and HoOx memory devices

Materials Chemistry and Physics

Volumn 139, Issue 2-3, 2013, Pages 437-442

  Pan, Tung Ming ^a   Lu, Chih Hung ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

Electrical properties; Electronic materials; Oxides; Semiconductors

Indexed keywords

CONDUCTION MECHANISM; ELECTRONIC MATERIALS; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; NON-VOLATILE MEMORY APPLICATION; RESISTIVE RANDOM ACCESS MEMORY (RRAM); ROOM-TEMPERATURE PROCESS; SPACE-CHARGE-LIMITED;

ELECTRIC PROPERTIES; ELECTROFORMING; OXIDES; PHOTOELECTRONS; SEMICONDUCTOR MATERIALS; TANTALUM COMPOUNDS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

RANDOM ACCESS STORAGE;

EID: 84875926685     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2013.01.015     Document Type: Article

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