Metal oxide resistive memory switching mechanism based on conductive filament properties

Journal of Applied Physics

Volumn 110, Issue 12, 2011, Pages

  Bersuker, G ^a,e   Gilmer, D C ^a,e   Veksler, D ^a,e   Kirsch, P ^a,e   Vandelli, L ^b   Padovani, A ^b   Larcher, L ^b   McKenna, K ^c   Shluger, A ^c   Iglesias, V ^d   Porti, M ^d   Nafria M ^d  

^a SEMATECH   (United States)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^c UNIVERSITY COLLEGE LONDON   (United Kingdom)

^d UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^e NONE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTROFORMING; ELECTRON TRANSPORT PROPERTIES; GRAIN BOUNDARIES; HAFNIUM OXIDES; LEAKAGE CURRENTS; METALS; RRAM; TITANIUM NITRIDE;

CONDUCTIVE FILAMENTS; DIELECTRIC BARRIER; ELECTRON TRANSPORT; HIGH RESISTIVE STATE; NONUNIFORM TEMPERATURE; PREFERENTIAL OXIDATION; RESISTIVE MEMORY (RRAM); TRAP ASSISTED TUNNELING;

DIELECTRIC MATERIALS;

EID: 84855306489     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3671565     Document Type: Article

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