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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 1, 2009, Pages 325-328

Hafnium oxide thin films: Effect of growth parameters on oxygen and hafnium vacancies

(6) Hildebrandt, E a Kurian, J a Zimmermann, J a Fleissner, A a Von Seggern, H a Alff, L a

a DARMSTADT UNIVERSITY OF TECHNOLOGY (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CORUNDUM; CRYSTAL GROWTH; FILM GROWTH; GROWTH (MATERIALS); HAFNIUM; HAFNIUM COMPOUNDS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; OXIDATION; OXIDES; OXYGEN; SOLIDS; SUBSTRATES; THIN FILMS; TRANSPORT PROPERTIES; VACANCIES;

FILM CHARACTERISTICS; GROWTH PARAMETERS; HAFNIUM OXIDE FILMS; HAFNIUM OXIDE THIN FILMS; HAFNIUM OXIDES; OPTICAL BAND-GAP; OXIDATION CONDITIONS; SAPPHIRE SUBSTRATES; SUBSTRATE TEMPERATURES;

OXIDE FILMS;

EID: 59949089215 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.3043474 Document Type: Article

Times cited : (14)

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