Physical properties and band structure of reactive molecular beam epitaxy grown oxygen engineered HfO 2 ± x

Journal of Applied Physics

Volumn 112, Issue 11, 2012, Pages

  Hildebrandt, Erwin ^a   Kurian, Jose ^a   Alff, Lambert ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT BANDS; FERROMAGNETIC BEHAVIORS; MONOCLINIC HFO; ORDERS OF MAGNITUDE; OXIDATION CONDITIONS; OXYGEN DEFICIENT; OXYGEN VACANCY CONCENTRATION; P-TYPE CONDUCTIVITY; RESISTIVITY CHANGES;

ENERGY GAP; EPITAXIAL GROWTH; FILM GROWTH; HAFNIUM OXIDES; MOLECULAR BEAM EPITAXY; OXYGEN VACANCIES; TRANSPORT PROPERTIES;

OXYGEN;

EID: 84871252818     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4767379     Document Type: Article

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