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Applied Physics Letters

Volumn 102, Issue 4, 2013, Pages

Demonstration and modeling of multi-bit resistance random access memory

(4) Yang, Xiang a Chen, Albert B K a Joon Choi, Byung a Chen, I Wei a

a UNIVERSITY OF PENNSYLVANIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTERMEDIATE STATE; LOAD RESISTANCES; MULTI-BITS; RESISTANCE RANDOM ACCESS MEMORY; RESISTANCE STATE; SPACE SAVINGS; STABILITY CONDITION; STATE DISTRIBUTIONS; SWITCHING SPEED; VOLTAGE PULSE;

ELECTRIC POTENTIAL;

RANDOM ACCESS STORAGE;

EID: 84873593501 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4790158 Document Type: Article

Times cited : (28)

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