Multilevel switching in forming-free resistive memory devices with atomic layer deposited HfTiOx nanolaminate

IEEE Electron Device Letters

Volumn 34, Issue 7, 2013, Pages 867-869

  Chakrabarti, Bhaswar ^a   Galatage, Rohit V ^a   Vogel, Eric M ^a,b  

^a UNIVERSITY OF TEXAS AT DALLAS   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Forming free; multilevel switching; nonvolatile memory; resistive random access memorie (RRAM)

Indexed keywords

ATOMIC LAYER DEPOSITED; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; DIELECTRIC STRUCTURE; FORMING-FREE; MATERIALS AND PROCESS; NON-VOLATILE MEMORY; RANDOM ACCESS; RESISTIVE RANDOM ACCESS MEMORY;

ATOMIC LAYER DEPOSITION; DIELECTRIC MATERIALS;

RANDOM ACCESS STORAGE;

EID: 84880048764     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2262917     Document Type: Article

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