Chemical and structural properties of conducting nanofilaments in TiN/HfO2-based resistive switching structures

Nanotechnology

Volumn 24, Issue 8, 2013, Pages

  Calka, P ^a   Martinez, E ^a   Delaye, V ^a   Lafond, D ^a   Audoit, G ^a   Mariolle, D ^a   Chevalier, N ^a   Grampeix, H ^a   Cagli, C ^a   Jousseaume, V ^a   Guedj, C ^a  

^a CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE ATOMIC FORCE MICROSCOPY; CONDUCTIVE FILAMENTS; CRYSTALLINE GRAINS; FILAMENTARY CONDUCTION; LOCALIZED STATE; METAL OXIDES; NANOFILAMENTS; NANOMETRES; OXYGEN CONTENT; OXYGEN DEPLETION; PARTIAL AMORPHIZATION; RESISTIVE SWITCHING; SCANNING SPREADING RESISTANCE MICROSCOPY; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SIZE AND SHAPE;

ATOMIC FORCE MICROSCOPY; ELECTROFORMING; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRONIC PROPERTIES; GRAIN BOUNDARIES; HAFNIUM OXIDES; METALLIC COMPOUNDS; NANOSTRUCTURED MATERIALS; OXYGEN; TRANSMISSION ELECTRON MICROSCOPY;

SWITCHING SYSTEMS;

EID: 84873442992     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/8/085706     Document Type: Article

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