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Physical Review B - Condensed Matter and Materials Physics

Volumn 85, Issue 19, 2012, Pages

Transport properties of HfO 2-x based resistive-switching memories

(6) Wang, Zhongrui a Yu, Hongyu b Tran, Xuan Anh a Fang, Zheng a Wang, Jinghao c Su, Haibin c

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

b SOUTHERN UNIVERSITY OF SCIENCE AND TECHNOLOGY (China)

c NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84861673464 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.85.195322 Document Type: Article

Times cited : (57)

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