Electronic structure of oxygen vacancies in hafnium oxide

Microelectronic Engineering

Volumn 109, Issue , 2013, Pages 21-23

  Perevalov, T V ^a   Aliev, V Sh ^a   Gritsenko, V A ^a   Saraev, A A ^b   Kaichev, V V ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b ENERGY SYSTEMS INSTITUTE   (Russian Federation)

Author keywords

Absorption spectra; Defect states; Density functional theory; Hafnium dioxide; Oxygen vacancy; Photoelectron spectroscopy

Indexed keywords

DEFECT STATE; ELECTRONIC STRUCTURE CALCULATIONS; FIRST-PRINCIPLES CALCULATION; HAFNIUM DIOXIDE; HYBRID DENSITY FUNCTIONAL THEORY; NON-STOICHIOMETRIC; PHOTOELECTRON SPECTRUM;

ABSORPTION SPECTRA; CALCULATIONS; DEFECTS; DENSITY FUNCTIONAL THEORY; ELECTRONIC STRUCTURE; ION BOMBARDMENT; OXYGEN VACANCIES; PHOTOELECTRON SPECTROSCOPY; PHOTOELECTRONS; X RAY PHOTOELECTRON SPECTROSCOPY;

HAFNIUM OXIDES;

EID: 84876557433     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2013.03.005     Document Type: Article

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