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Journal of Applied Physics

Volumn 109, Issue 12, 2011, Pages

Origin of resistivity change in NiO thin films studied by hard x-ray photoelectron spectroscopy

(9) Calka, P a Martinez, E a Lafond, D a Minoret, S a Tirano, S b Detlefs, B c Roy, J c Zegenhagen, J c Guedj, C a

a CEA LETI (France)

b AIX MARSEILLE UNIVERSITÉ (France)

c EUROPEAN SYNCHROTRON RADIATION FACILITY (France)

Author keywords

[No Author keywords available]

Indexed keywords

BANDGAP STATE; DRIVING MECHANISM; ENERGY SHIFT; HARD X-RAY PHOTOELECTRON SPECTROSCOPY; KEYPOINTS; METALLIC NICKEL; NIO THIN FILM; NON DESTRUCTIVE; OXYGEN ATOM; OXYGEN DEFECT; PHYSICO-CHEMICALS; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE STATE; RESISTIVITY CHANGES;

CHEMICAL ANALYSIS; DEFECTS; OXYGEN; PHOTOELECTRICITY; PHOTOELECTRON SPECTROSCOPY; PHOTONS; RANDOM ACCESS STORAGE; X RAY PHOTOELECTRON SPECTROSCOPY;

OXYGEN VACANCIES;

EID: 79960199213 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3596809 Document Type: Article

Times cited : (23)

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