Highly uniform, self-compliance, and forming-free ALD HfO 2-based RRAM with Ge doping

IEEE Transactions on Electron Devices

Volumn 59, Issue 4, 2012, Pages 1203-1208

  Wang, Zhongrui ^a   Zhu, W G ^a   Du, A Y ^b   Wu, L ^a   Fang, Z ^a   Tran, X A ^a   Liu, W J ^a   Zhang, K L ^c   Yu, H Y ^d  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b GLOBALFOUNDARIES   (Singapore)

^c TIANJIN UNIVERSITY OF TECHNOLOGY   (China)

^d SOUTHERN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Atomic layer deposition (ALD); HfO 2; resistive switching; resistive switching random access memory (RRAM)

Indexed keywords

ANNEALING CONDITION; ATOMIC LAYER DEPOSITED; COMPARATIVE EXPERIMENTS; DEPOSITION TECHNIQUE; FIRST PRINCIPLE CALCULATIONS; FORMATION ENERGIES; GE-DOPING; HFO 2; HIGH UNIFORMITY; METAL-DOPING; OXYGEN DEFICIENCY; RANDOM ACCESS MEMORIES; RESISTIVE SWITCHING;

GERMANIUM; HAFNIUM OXIDES; RANDOM ACCESS STORAGE;

ATOMIC LAYER DEPOSITION;

EID: 84862830830     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2182770     Document Type: Article

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