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Advanced Functional Materials

Volumn 22, Issue 3, 2012, Pages 546-554

A parallel circuit model for multi-state resistive-switching random access memory

(4) Chen, Albert B K a Choi, Byung Joon a Yang, Xiang a Chen, I Wei a

a UNIVERSITY OF PENNSYLVANIA (United States)

Author keywords

charge transport; data storage; electronic structures processes mechanisms; hybrid materials; thin films

Indexed keywords

ADVANCED MATERIALS; DATA STORAGE; INTERMEDIATE STATE; LARGE POPULATION; MEMORY RETENTION; MODELING FRAMEWORKS; MULTI STATE; PARALLEL CIRCUITS; RANDOM ACCESS MEMORIES; RANDOM MATERIALS; RESISTANCE SWITCHING; SIMPLE APPROACH; SIMPLE CIRCUITS; SWITCHING CHARACTERISTICS; TIME RESPONSE;

CHARGE TRANSFER; CIRCUIT THEORY; HYBRID MATERIALS; SWITCHING; THIN FILMS;

RANDOM ACCESS STORAGE;

EID: 84863033846 PISSN: 1616301X EISSN: 16163028 Source Type: Journal
DOI: 10.1002/adfm.201102208 Document Type: Article

Times cited : (38)

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