Multi-level conduction in NiO resistive memory device prepared by solution route

Journal of Physics D: Applied Physics

Volumn 46, Issue 9, 2013, Pages

  Kannan, V ^a   Senthilkumar, V ^a   Rhee, J K ^a  

^a Dongguk University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTANCE STATE; CONDUCTIVE FILAMENTS; FABRICATED DEVICE; MEMORY OPERATIONS; NICKEL OXIDES (NIO); NON-VOLATILE; OFF STATE; RESISTANCE VALUES; RESISTIVE MEMORIES; ROOM TEMPERATURE; SOLUTION ROUTES; SWITCHING CYCLES; SWITCHING MECHANISM; SWITCHING PARAMETERS;

NICKEL OXIDE;

FILM PREPARATION;

EID: 84874096793     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/46/9/095301     Document Type: Article

References (32)

1. Waser R and Aono M 2007 Nature Mater. 6 833 (Pubitemid 350064191)
2. Seo S et al 2004 Appl. Phys. Lett. 85 5655 (Pubitemid 40162553)
3. Russo U, Ielmini D, Cagli C and Lacaita A L 2009 IEEE Trans. Electron Devices 56 186
4. Wang W, Fujita S and Wong S S 2009 IEEE Electron Device Lett. 30 733
5. Kim Y M and Lee J S 2008 J. Appl. Phys. 104 114115
6. Lee M-J et al 2011 Nature Mater. 10 625
7. Ozer N and Lampert C M 1998 Sol. Energy Mater. Sol. Cells 54 147
8. Banger K K, Yamashita Y, Mori K, Peterson R L, Leedham T, Rickard J and Sirringhaus H 2011 Nature Mater. 10 45
9. Miquel J L G, Zhang Q, Allen S J, Rougier A, Blyr A, Davies H O, Jones A C, Leedham R J, Williams P A and Impey S A 2003 Thin Solid Films 424 165
10. Gonüalez A E J and Cambray J G 2000 Surf. Eng. 16 73
11. Sharma P K, Fantini M C A and Gorenstein A 1998 Solid State Ion. 113 457
12. Wnag L, Zhang Z and Cao Y 1993 J. Ceram. Soc. Japan 101 227
13. Surca A, Orel B and Pihlar B 1997 J. Sol-Gel Sci. Tech. 8 743
14. Pejova B, Kocareva T, Najdoski M and Grozdanov I 2000 Appl. Surf. Sci. 165 271
15. Fang T N et al 2006 IEDM Technical Digest 789
16. Kim D C et al 2006 Appl. Phys. Lett. 88 202102 (Pubitemid 43781782)
17. Russo U, Ielmini D, Cagli C, Lacaita A L, Spiga S, Wiemer C, Perego M and Fanciulli M 2007 IEDM Technical Digest 775
18. Lombardo S, Stathis J H, Linder B P, Pey K L, Palumbo F and Tung C H 2005 J. Appl. Phys. 98 121301 (Pubitemid 43032083)
19. Gao B, Sun B, Zhang H, Liu l, Liu X, Han R, Kang J and Yu B 2009 IEEE Electron Device Lett. 30 1326
20. Sawa A 2008 Mater. Today 11 28 (Pubitemid 351680723)
21. Waser R, Dittmann R, Staikov G and Szot K 2009 Adv. Mater. 21 2632
22. Goux L, Polspoel W, Lisoni J G, Chen Y Y, Pantisano L, Wang X P, Vandervorst W, Jurczak M and Wouters D 2010 J. Electrochem. Soc. 157 G187
23. Oka K, Yanagida T, Nagashima K, Kanai M, Kawai T, Kim J-S and Park B H 2011 J. Am. Chem. Soc. 133 12482
24. Akinaga H and Shima H 2010 Proc. IEEE 98 2237
25. Chen M C, Chang T C, Huang S Y, Chen S C, Hu C W, Tsai C T and Sze S M 2010 Electrochem. Solid-State Lett. 13 H191
26. Lee H Y, Chen P S, Wu T Y, Chen Y S, Wang C C, Tzeng P J, Lin C H, Chen F, Lien C H and Tsai M J 2008 Technical Digest - Int. Electron Devices Meeting 297
27. Ielmini D, Nardi F and Cagli C 2010 Appl. Phys. Lett. 96 053503
28. Bedeschi F et al 2009 IEEE J. Solid-State Circuits 44 217
29. Lampert M A 1956 Phys. Rev. 103 1648
30. Kim K M, Choi B J, Lee M H, Kim G H, Song S J, Seok J Y, Yoon J H, Han S and Hwang C S 2011 Nanotechnology 22 254010
31. Chang K M, Tzeng W H, Liu K C and Lai W R 2010 ECS Trans. 28 119
32. Hwang I et al 2010 Appl. Phys. Lett. 97 052106