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Volumn 110, Issue 6, 2011, Pages

Unintentional incorporation of hydrogen in wurtzite InN with different surface orientations

(10) Darakchieva, V a,b Lorenz, K b Xie, M Y a Alves, E b Hsiao, C L c Chen, L C c Tu, L W d Schaff, W J e Yamaguchi, T f Nanishi, Y f

a LINKÖPING UNIVERSITY (Sweden)

b INSTITUTO TECNOLÓGICO E NUCLEAR (Portugal)

c NATIONAL TAIWAN UNIVERSITY (Taiwan)

d NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

e School of Operations Research and Industrial Engineering (United States)

f RITSUMEIKAN UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALED FILMS; AS-GROWN FILMS; CHEMICAL TREATMENTS; GRAIN SIZE; GROWTH MODES; HYDROGEN CONCENTRATION; HYDROGEN IMPURITY; INN FILMS; NEAR-SURFACE; NON-POLAR; SEMIPOLAR; STRUCTURAL QUALITIES; SURFACE ORIENTATION; THERMAL-ANNEALING; WURTZITES;

ANNEALING; CHEMICAL STABILITY; GRAIN GROWTH; ZINC SULFIDE;

HYDROGEN;

EID: 80053511003 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3642969 Document Type: Article

Times cited : (3)

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