Impact of Mg concentration on energy-band-depth profile of Mg-doped InN epilayers analyzed by hard X-ray photoelectron spectroscopy

Applied Physics Letters

Volumn 103, Issue 16, 2013, Pages

  Imura, M ^a   Tsuda, S ^a   Nagata, T ^a   Takeda, H ^a   Liao, M Y ^a   Yang, A L ^a   Yamashita, Y ^a   Yoshikawa, H ^a   Koide, Y ^a   Kobayashi, K ^a   Yamaguchi, T ^b,c   Kaneko, M ^c   Uematsu, N ^c   Wang, K ^c   Araki, T ^c   Nanishi, Y ^c,d  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b KOGAKUIN UNIVERSITY   (Japan)

^c RITSUMEIKAN UNIVERSITY   (Japan)

^d Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE-RESOLVED; HARD X-RAY PHOTOELECTRON SPECTROSCOPY; HOMOJUNCTION; MG CONCENTRATIONS; OXYGEN CONCENTRATIONS; P-TYPE LAYERS; PHOTOELECTRON SPECTRUM; SURFACE ELECTRON ACCUMULATION;

BAND STRUCTURE; ELECTRONIC STRUCTURE; EPILAYERS; PHOTOELECTRONS; POLYACRYLONITRILES; X RAYS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84886409789     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4826094     Document Type: Article

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