MBE growth and characterization of Mn-doped InN

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 30, Issue 2, 2012, Pages

  Chai, Jessica H ^a   Myers, Thomas H ^a   Song, Young Wook ^b   Reeves, Roger J ^b   Linhart, Wojciech M ^c   Morris, Richard J H ^c   Veal, Timothy D ^c   Dowsett, Mark G ^c   McConville, Christopher F ^c   Durbin, Steven M ^d,e  

^a Texas State University   (United States)

^b UNIVERSITY OF CANTERBURY   (New Zealand)

^c UNIVERSITY OF WARWICK   (United Kingdom)

^d State University of New York   (United States)

^e UNIVERSITY AT BUFFALO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; GALLIUM NITRIDE; HOLE MOBILITY; MANGANESE; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SPECTRUM ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

DOPING LEVELS; ELECTRICAL AND OPTICAL PROPERTIES; INN THIN FILMS; LEVEL SHIFT; LIGHT HOLES; LOW ENERGIES; LOW TEMPERATURE PHOTOLUMINESCENCE; MBE GROWTH; MN-DOPED; MOBILITY SPECTRUM ANALYSIS; P-TYPE GAN;

DOPING (ADDITIVES);

EID: 84861584837     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3687903     Document Type: Article

References (29)

1. J. Wu, J. Appl. Phys. 106, 011101 (2009). 10.1063/1.3155798
2. I. Mahboob, T. D. Veal, C. F. McConville, H. Lu, and W. J. Schaff, Phys. Rev. Lett. 92, 036804 (2004). 10.1103/PhysRevLett.92.036804
3. R. E. Jones, K. M. Yu, S. X. Li, W. Walukiewicz, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, Phys. Rev. Lett. 96, 125505 (2006). 10.1103/PhysRevLett.96.125505
4. P. A. Anderson, C. H. Swartz, D. Carder, R. J. Reeves, S. M. Durbin, S. Chandril, and T. H. Myers, Appl. Phys. Lett. 89, 184104 (2006). 10.1063/1.2378489
5. N. Miller, Physica B 404, 4862 (2009). 10.1016/j.physb.2009.08.242
6. L. R. Bailey, T. D. Veal, C. E. Kendrick, S. M. Durbin, and C. F. McConville, Appl. Phys. Lett. 95, 19211 (2009).
7. Y.-H. Chang, Y.-S. Lu, Y.-L. Hong, C.-T. Kuo, S. Gwo, and J. A. Yeh, J. Appl. Phys. 107, 043710 (2010). 10.1063/1.3318685
8. A. Yoshikawa, X. Wang, Y. Ishitani, and A. Uedono, Phys. Status Solidi B 207, 1011 (2010). 10.1002/pssa.200983118
9. S. J. Pearton, C. R. Abernathy, D. P. Norton, A. F. Hebard, Y. D. Park, L. A. Boatner, and J. D. Budai, Mater. Sci. Eng. R 40, 137 (2003). 10.1016/S0927-796X(02)00136-5
10. P. P. Chen, H. Makino, and T. Yao, J. Cryst. Growth 269, 66 (2004). 10.1016/j.jcrysgro.2004.05.073
11. A. Ney, R. Rajaram, E. Arenholz, J. S. Harris, Jr., M. Samant, R. F. C. Farrow, and S. S. P. Parkin, J. Magn. Magn. Mater. 300, 7 (2006). 10.1016/j.jmmm.2005.10.022
12. C. T. Foxon, J. Cryst. Growth 278, 685 (2005). 10.1016/j.jcrysgro.2004. 12.112
13. Z. Sofer, D. Sedmidubsky, J. Stejskal, J. Hejtmanek, M. Marysko, K. Jurek, M. Vaclavu, V. Havranek, and A. Mackova, J. Cryst. Growth 310, 5025 (2008). 10.1016/j.jcrysgro.2008.07.103
14. P. D. C. King, T. D. Veal, and C. F. McConville, J. Phys.: Condens. Matter 21, 174201 (2009). 10.1088/0953-8984/21/17/174201
15. J. R. Meyer, C. A. Hoffman, F. J. Bartoli, D. A. Arnold, S. Sivananthan, and J. P. Faurie, Semicond. Sci. Technol. 8, 805 (1993). 10.1088/0268-1242/8/6S/ 004
16. W. A. Beck and J. R. Anderson, J. Appl. Phys. 62, 541 (1987). 10.1063/1.339780
17. C. H. Swartz, R. P. Tompkins, N. C. Giles, T. H. Myers, H. Lu, W. J. Schaff, and L. F. Eastman, J. Cryst. Growth 269, 29 (2004). 10.1016/j.jcrysgro. 2004.05.030
18. C. H. Swartz, R.P. Tompkins, T. H. Myers, D. C. Look, and J. R. Sizelove, J. Electron. Mater. 33, 412 (2004). 10.1007/s11664-004-0193-8
19. E. O. Kane, J. Phys. Chem. Solids 1, 249 (1957). 10.1016/0022-3697(57) 90013-6
20. H. A. Washburn, J. R. Sites, and H. H. Wieder, J. Appl. Phys. 50, 4872 (1979). 10.1063/1.326552
21. J. Wu, W. Walukiewicz, W. Shan, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, Phys. Rev. B 66, 201403 (2002). 10.1103/PhysRevB.66.201403
22. X. Wang, S.-B. Che, Y. Ishitani, and A. Yoshikawa, Appl. Phys. Lett. 90, 201913 (2007). 10.1063/1.2741124
23. W. M. Linhart, J. H. Chai, A. K. Shukla, R. J. H. Morris, M. G. Dowsett, C. F. McConville, S. M. Durbin, and T. D. Veal (unpublished).
24. T. D. Veal, Phys. Rev. B 76, 075313 (2007). 10.1103/PhysRevB.76.075313
25. P. D. C. King, Appl. Phys. Lett. 91, 092101 (2007). 10.1063/1.2775807
26. N. Khan, N. Nepal, A. Sedhain, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 91, 012101 (2007). 10.1063/1.2753537
27. A. A. Klochikhin, V. Y. Davydov, V. V. Emtsev, A. V. Sakharov, V. A. Kapitonov, B. A. Andreev, H. Lu, and W. J. Schaff, Phys. Rev. B 71, 195207 (2005). 10.1103/PhysRevB.71.195207
28. T. Schmidt, K. Lischka, and W. Zulehner, Phys. Rev. B 45, 8989 (1992). 10.1103/PhysRevB.45.8989
29. A. Mart, C. Tablero, E. Antoln, A. Luque, R. P. Campion, S. V. Novikov, and C. T. Foxon, Sol. Energy Mater. Sol. Cells 93, 641 (2009). 10.1016/j.solmat.2008.12.031