Origin of the n-type conductivity of InN: The role of positively charged dislocations

Applied Physics Letters

Volumn 88, Issue 25, 2006, Pages

  Piper, L F J ^a   Veal, T D ^a   McConville, C F ^a   Lu, Hai ^b   Schaff, W J ^b  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ACCUMULATION; FILM THICKNESS; FREE ELECTRON CONCENTRATION;

CARRIER CONCENTRATION; DISLOCATIONS (CRYSTALS); ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; HALL EFFECT; NITROGEN; SINGLE CRYSTALS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 33745512325     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2214156     Document Type: Article

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