Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN

Physica Status Solidi (A) Applications and Materials Science

Volumn 209, Issue 1, 2012, Pages 91-94

  Darakchieva, V ^a,b   Lorenz, K ^a   Xie, M Y ^a,b   Alves, E ^a   Schaff, W J ^c   Yamaguchi, T ^d   Nanishi, Y ^d   Ruffenach, S ^e   Moret, M ^e   Briot, O ^e  

^a INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^b LINKÖPING UNIVERSITY   (Sweden)

^c School of Operations Research and Industrial Engineering   (United States)

^d RITSUMEIKAN UNIVERSITY   (Japan)

^e UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

hydrogen; InN; nonpolar surfaces; unintentional doping

Indexed keywords

A-PLANE; AS-GROWN; COMPREHENSIVE STUDIES; DEPTH PROFILE; FREE ELECTRON CONCENTRATION; GRAIN SIZE; GROWTH MODES; HYDROGEN IMPURITY; INN; INN FILMS; NEAR-SURFACE; NON-POLAR; NON-POLAR SURFACES; STRUCTURAL CHARACTERISTICS; SURFACE ORIENTATION; THERMAL-ANNEALING; UNINTENTIONAL DOPING;

GRAIN GROWTH; HYDROGEN; SEMICONDUCTOR DOPING; TWO DIMENSIONAL;

ELECTRONS;

EID: 84055212601     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201100175     Document Type: Article

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