Step-flow growth of In-polar InN by molecular beam epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 24-28, 2006, Pages

  Wang, Xinqiang ^a   Che, Song Bek ^a   Ishitani, Yoshihiro ^a   Yoshikawa, Akihiko ^a  

^a CHIBA UNIVERSITY   (Japan)

Author keywords

In polar inn; MBE; Photoluminescence; Step flow growth; Surface morphology

Indexed keywords

GALLIUM NITRIDE; HALL EFFECT; MOLECULAR BEAM EPITAXY; MONOLAYERS; SURFACE ROUGHNESS;

DISLOCATION DENSITY; ELECTRON CONCENTRATION; HALL MOBILITY; IN-POLAR INN; STEP-FLOW GROWTH;

INDIUM COMPOUNDS;

EID: 33746281433     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L730     Document Type: Article

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