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Volumn 96, Issue 8, 2010, Pages

Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material

(13) Darakchieva, V a,b Lorenz, K a Barradas, N P a Alves, E a Monemar, B b Schubert, M c Franco, N a Hsiao, C L d Chen, L C d Schaff, W J e Tu, L W f Yamaguchi, T g Nanishi, Y g

a INSTITUTO TECNOLÓGICO E NUCLEAR (Portugal)

b LINKÖPING UNIVERSITY (Sweden)

c UNIVERSITY OF NEBRASKA LINCOLN (United States)

d NATIONAL TAIWAN UNIVERSITY (Taiwan)

e Cornell University (United States)

f NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

g RITSUMEIKAN UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION DENSITIES; FREE ELECTRON; FREE ELECTRON CONCENTRATION; IMPURITIES IN; INN FILMS; NEAR SURFACE REGIONS; NEAR-SURFACE; SURFACE CONTAMINATIONS; THERMAL-ANNEALING;

CRYSTAL GROWTH; HYDROGEN; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTOR QUANTUM WIRES;

SURFACES;

EID: 77749270577 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3327333 Document Type: Article

Times cited : (44)

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