Structural differences in Mg-doped InN - Indication of polytypism

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 7-8, 2010, Pages 2025-2028

  Liliental Weber, Z ^a   Hawkridge, M E ^a   Wang, X ^b   Yoshikawa, A ^c  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b PEKING UNIVERSITY   (China)

^c CHIBA UNIVERSITY   (Japan)

Author keywords

Dislocations; Doping; InN; MBE; Structure; TEM

Indexed keywords

DISLOCATIONS; DOPING; INN; MBE; STRUCTURE; TEM;

DEFECTS; NITRIDES; POLYMORPHISM; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

CONCENTRATION (PROCESS);

EID: 77955788853     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200983623     Document Type: Conference Paper

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