Free electron behavior in InN: On the role of dislocations and surface electron accumulation

Applied Physics Letters

Volumn 94, Issue 2, 2009, Pages

  Darakchieva, V ^a,b   Hofmann, T ^c   Schubert, M ^c   Sernelius, B E ^b   Monemar, B ^b   Persson, P O A ^b   Giuliani, F ^b   Alves, E ^a   Lu, H ^d   Schaff, W J ^d  

^a INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^b LINKÖPING UNIVERSITY   (Sweden)

^c UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^d Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON DENSITY MEASUREMENT; GALVANOMAGNETIC EFFECTS; HALL EFFECT; MAGNETIC FIELD EFFECTS;

BULK DENSITIES; BULK ELECTRONS; CONTACTLESS; DOPING MECHANISMS; ELECTRON DENSITIES; FREE ELECTRONS; INN FILMS; NITROGEN VACANCIES; OPTICAL-; SURFACE ACCUMULATIONS; SURFACE ELECTRON ACCUMULATIONS; SURFACE ELECTRON DENSITIES;

ELECTRONS;

EID: 58349084540     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3065030     Document Type: Article

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