In-polar InN grown by plasma-assisted molecular beam epitaxy

Applied Physics Letters

Volumn 89, Issue 3, 2006, Pages

  Gallinat, Chad S ^a   Koblmüller, Gregor ^a   Brown, Jay S ^a   Bernardis, Sarah ^a   Speck, James S ^a   Chern, Grace D ^b   Readinger, Eric D ^b   Shen, Hongen ^b   Wraback, Michael ^b  

^a University of California   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ACCUMULATIONS; ELECTRON CONCENTRATIONS; GA-DROPLET REGIME; INN FILMS;

ELECTRON MOBILITY; MOLECULAR BEAM EPITAXY; PLASMA APPLICATIONS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; THIN FILMS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 33746462267     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2234274     Document Type: Article

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