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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 31, Issue 3, 2013, Pages

Polarity control and transport properties of Mg-doped (0001) InN by plasma-assisted molecular beam epitaxy

(4) Choi, Soojeong a Wu, Feng a Bierwagen, Oliver a,b Speck, James S a

a University of California (United States)

b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DONOR CONCENTRATIONS; MG CONCENTRATIONS; MORPHOLOGICAL TRANSITIONS; P-TYPE CONDUCTIVITY; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; POLARITY CONTROL; POLARITY INVERSION; THICK INN FILMS;

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; TRANSMISSION ELECTRON MICROSCOPY; TRANSPORT PROPERTIES;

EPITAXIAL GROWTH;

EID: 84877788550 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.4795811 Document Type: Article

Times cited : (7)

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