SCOPUS 정보 검색 플랫폼

Physical Review B - Condensed Matter and Materials Physics

Volumn 84, Issue 7, 2011, Pages

Effect of charged dislocation scattering on electrical and electrothermal transport in n-type InN

(9) Miller, Nate a,b Haller, Eugene E a,b Koblmüller, Gregor c Gallinat, Chad d Speck, James S d Schaff, William J e Hawkridge, Michael E a Yu, Kin Man a Ager, Joel W a

a LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

b Lawrence Berkeley National Laboratory (United States)

c WALTER SCHOTTKY INSTITUT (Germany)

d University of California (United States)

e Cornell University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 80052481853 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.84.075315 Document Type: Article

Times cited : (70)

References (58)

1
- 33244462383
- Structure and electronic properties of InN and In-rich group III-nitride alloys
- DOI 10.1088/0022-3727/39/5/R01, PII S0022372706971265
- W. Walukiewicz, J. W. Ager, III, K. M. Yu, Z. Liliental-Weber, J. Wu, S. X. Li, R. E. Jones, and J. D. Denlinger, J. Phys. D JPAPBE 0022-3727 10.1088/0022-3727/39/5/R01 39, R83 (2006). (Pubitemid 43279709)
- (2006) Journal of Physics D: Applied Physics , vol.39 , Issue.5
- Walukiewicz, W.¹ Ager Jr., J.W.² Yu, K.M.³ Liliental-Weber, Z.⁴ Wu, J.⁵ Li, S.X.⁶ Jones, R.E.⁷ Denlinger, J.D.⁸

2
- 76449091448
- APPLAB 0003-6951 10.1063/1.3304169
- M. Goiran, M. Millot, J. M. Poumirol, I. Gherasoiu, W. Walukiewicz, and J. Leotin, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3304169 96, 052117 (2010).
- (2010) Appl. Phys. Lett. , vol.96 , pp. 052117
- Goiran, M.¹ Millot, M.² Poumirol, J.M.³ Gherasoiu, I.⁴ Walukiewicz, W.⁵ Leotin, J.⁶

3
- 31144450062
- Low-field electron mobility in wurtzite InN
- DOI 10.1063/1.2166195, 032101
- V. M. Polyakov and F. Schwierz, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2166195 88, 032101 (2006). (Pubitemid 43133687)
- (2006) Applied Physics Letters , vol.88 , Issue.3 , pp. 1-3
- Polyakov, V.M.¹ Schwierz, F.²

4
- 35349009207
- PSSBBD 0370-1972 10.1002/pssb.200642433
- Z. Yarar, Phys. Status Solidi B PSSBBD 0370-1972 10.1002/pssb.200642433 244, 3711 (2007).
- (2007) Phys. Status Solidi B , vol.244 , pp. 3711
- Yarar, Z.¹

5
- 67650711664
- JAPIAU 0021-8979 10.1063/1.3155798
- J. Wu, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.3155798 106, 011101 (2009).
- (2009) J. Appl. Phys. , vol.106 , pp. 011101
- Wu, J.¹

6
- 0141608080
- JAPIAU 0021-8979 10.1063/1.1595135
- A. G. Bhuiyan, A. Hashimoto, and A. Yamamoto, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1595135 94, 2779 (2003).
- (2003) J. Appl. Phys. , vol.94 , pp. 2779
- Bhuiyan, A.G.¹ Hashimoto, A.² Yamamoto, A.³

7
- 33746462267
- In-polar InN grown by plasma-assisted molecular beam epitaxy
- DOI 10.1063/1.2234274
- C. S. Gallinat, G. Koblmüller, J. S. Brown, S. Bernardis, J. S. Speck, G. D. Chern, E. D. Readinger, H. Shen, and M. Wraback, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2234274 89, 032109 (2006). (Pubitemid 44121194)
- (2006) Applied Physics Letters , vol.89 , Issue.3 , pp. 032109
- Gallinat, C.S.¹ Koblmuller, G.² Brown, J.S.³ Bernardis, S.⁴ Speck, J.S.⁵ Chern, G.D.⁶ Readinger, E.D.⁷ Shen, H.⁸ Wraback, M.⁹

8
- 67650733476
- APPLAB 0003-6951 10.1063/1.3173202
- C. S. Gallinat, G. Koblmüller, and J. S. Speck, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3173202 95, 022103 (2009).
- (2009) Appl. Phys. Lett. , vol.95 , pp. 022103
- Gallinat, C.S.¹ Koblmüller, G.² Speck, J.S.³

9
- 77749270577
- APPLAB 0003-6951 10.1063/1.3327333
- V. Darakchieva, K. Lorenz, N. P. Barradas, E. Alves, B. Monemar, M. Schubert, N. Franco, C. L. Hsiao, L. C. Chen, W. J. Schaff, L. W. Tu, T. Yamaguchi, and Y. Nanishi, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3327333 96, 081907 (2010).
- (2010) Appl. Phys. Lett. , vol.96 , pp. 081907
- Darakchieva, V.¹ Lorenz, K.² Barradas, N.P.³ Alves, E.⁴ Monemar, B.⁵ Schubert, M.⁶ Franco, N.⁷ Hsiao, C.L.⁸ Chen, L.C.⁹ Schaff, W.J.¹⁰ Tu, L.W.¹¹ Yamaguchi, T.¹² Nanishi, Y.¹³

10
- 0037468061
- APPLAB 0003-6951 10.1063/1.1539547
- E. A. Davis, S. F. J. Cox, R. L. Lichti, and C. G. Van de Walle, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1539547 82, 592 (2003).
- (2003) Appl. Phys. Lett. , vol.82 , pp. 592
- Davis, E.A.¹ Cox, S.F.J.² Lichti, R.L.³ Van De Walle, C.G.⁴

11
- 38549181838
- Sources of unintentional conductivity in InN
- DOI 10.1063/1.2832369
- A. Janotti, and C. G. Van de Walle, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2832369 92, 032104 (2008). (Pubitemid 351160611)
- (2008) Applied Physics Letters , vol.92 , Issue.3 , pp. 032104
- Janotti, A.¹ Van De Walle, C.G.²

12
- 33745512325
- Origin of the n-type conductivity of InN: The role of positively charged dislocations
- DOI 10.1063/1.2214156
- L. F. J. Piper, T. D. Veal, C. F. McConville, H. Lu, and W. J. Schaff, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2214156 88, 252109 (2006). (Pubitemid 43959084)
- (2006) Applied Physics Letters , vol.88 , Issue.25 , pp. 252109
- Piper, L.F.J.¹ Veal, T.D.² McConville, C.F.³ Lu, H.⁴ Schaff, W.J.⁵

13
- 34247269231
- Threading dislocations in In-polar InN films and their effects on surface morphology and electrical properties
- DOI 10.1063/1.2720717
- X. Wang, S. B. Che, Y. Ishitani, and A. Yoshikawa, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2720717 90, 151901 (2007). (Pubitemid 46609824)
- (2007) Applied Physics Letters , vol.90 , Issue.15 , pp. 151901
- Wang, X.¹ Che, S.-B.² Ishitani, Y.³ Yoshikawa, A.⁴

14
- 48249116766
- JPAPBE 0022-3727 10.1088/0022-3727/41/13/135403
- H. Wang, D. S. Jiang, L. L. Wang, X. Sun, W. B. Liu, D. G. Zhao, J. J. Zhu, Z. S. Liu, Y. T. Wang, S. M. Zhang, and H. Yang, J. Phys. D: Appl. Phys. JPAPBE 0022-3727 10.1088/0022-3727/41/13/135403 41, 135403 (2008).
- (2008) J. Phys. D: Appl. Phys. , vol.41 , pp. 135403
- Wang, H.¹ Jiang, D.S.² Wang, L.L.³ Sun, X.⁴ Liu, W.B.⁵ Zhao, D.G.⁶ Zhu, J.J.⁷ Liu, Z.S.⁸ Wang, Y.T.⁹ Zhang, S.M.¹⁰ Yang, H.¹¹

15
- 0142229556
- APPLAB 0003-6951 10.1063/1.1616659
- C. J. Lu, L. A. Bendersky, H. Lu, and W. J. Schaff, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1616659 83, 2817 (2003).
- (2003) Appl. Phys. Lett. , vol.83 , pp. 2817
- Lu, C.J.¹ Bendersky, L.A.² Lu, H.³ Schaff, W.J.⁴

16
- 33745043541
- High-quality InN grown on KOH wet etched N-polar InN template by RF-MBE
- DOI 10.1002/pssa.200565321
- D. Muto, H. Naoi, T. Araki, S. Kitagawa, M. Kurouchi, H. Na, and Y. Nanishi, Phys. Status Solidi A 0031-8965 10.1002/pssa.200565321 203, 1691 (2006). (Pubitemid 43875357)
- (2006) Physica Status Solidi (A) Applications and Materials , vol.203 , Issue.7 , pp. 1691-1695
- Muto, D.¹ Naoi, H.² Araki, T.³ Kitagawa, S.⁴ Kurouchi, M.⁵ Na, H.⁶ Nanishi, Y.⁷

17
- 33751119530
- Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation network
- DOI 10.1063/1.2363233
- V. Lebedev, V. Cimalla, J. Pezoldt, M. Himmerlich, S. Krischok, J. A. Schaefer, O. Ambacher, F. M. Morales, J. G. Lozano, and D. González, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2363233 100, 094902 (2006). (Pubitemid 44772649)
- (2006) Journal of Applied Physics , vol.100 , Issue.9 , pp. 094902
- Lebedev, V.¹ Cimalla, V.² Pezoldt, J.³ Himmerlich, M.⁴ Krischok, S.⁵ Schaefer, J.A.⁶ Ambacher, O.⁷ Morales, F.M.⁸ Lozano, J.G.⁹ Gonzalez, D.¹⁰

18
- 42249099810
- JECMA5 0361-5235 10.1007/s11664-007-0373-4
- T. Akagi, K. Kosaka, S. Harui, D. Muto, H. Naoi, T. Araki, and Y. Nanishi, J. Electron. Mater. JECMA5 0361-5235 10.1007/s11664-007-0373-4 37, 603 (2008).
- (2008) J. Electron. Mater. , vol.37 , pp. 603
- Akagi, T.¹ Kosaka, K.² Harui, S.³ Muto, D.⁴ Naoi, H.⁵ Araki, T.⁶ Nanishi, Y.⁷

19
- 0035251924
- Dislocation-independent mobility in lattice-mismatched epitaxy: Application to GaN
- DOI 10.1016/S0038-1098(01)00010-2
- D. C. Look, C. E. Stutz, R. J. Molnar, K. Saarinen, and Z. Liliental-Weber, Solid State Commun. SSCOA4 0038-1098 10.1016/S0038-1098(01) 00010-2 117, 571 (2001). (Pubitemid 32195740)
- (2001) Solid State Communications , vol.117 , Issue.10 , pp. 571-575
- Look, D.C.¹ Stutz, C.E.² Molnar, R.J.³ Saarinen, K.⁴ Liliental-Weber, Z.⁵

20
- 33751119530
- Effect of dislocations on electrical and electron transport properties of InN thin films. II. Density and mobility of the carriers
- DOI 10.1063/1.2363234
- V. Lebedev, V. Cimalla, T. Baumann, O. Ambacher, F. M. Morales, J. G. Lozano, and D. González, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2363234 100, 094903 (2006). (Pubitemid 44772650)
- (2006) Journal of Applied Physics , vol.100 , Issue.9 , pp. 094903
- Lebedev, V.¹ Cimalla, V.² Baumann, T.³ Ambacher, O.⁴ Morales, F.M.⁵ Lozano, J.G.⁶ Gonzalez, D.⁷

21
- 0000926633
- PRLTAO 0031-9007 10.1103/PhysRevLett.82.1237
- D. C. Look and J. R. Sizelove, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.82.1237 82, 1237 (1999).
- (1999) Phys. Rev. Lett. , vol.82 , pp. 1237
- Look, D.C.¹ Sizelove, J.R.²

22
- 39249084807
- PRLTAO 0031-9007 10.1103/PhysRevLett.87.205504
- D. Cherns and C. G. Jiao, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.87.205504 87, 205504 (2001).
- (2001) Phys. Rev. Lett. , vol.87 , pp. 205504
- Cherns, D.¹ Jiao, C.G.²

23
- 33745106293
- Probing the electrostatic potential of charged dislocations in n-GaN and n-ZnO epilayers by transmission electron holography
- DOI 10.1103/PhysRevB.73.245316
- E. Müller, D. Gerthsen, P. Brückner, F. Scholz, T. Gruber, and A. Waag, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.73.245316 73, 245316 (2006). (Pubitemid 43883218)
- (2006) Physical Review B - Condensed Matter and Materials Physics , vol.73 , Issue.24 , pp. 245316
- Muller, E.¹ Gerthsen, D.² Bruckner, P.³ Scholz, F.⁴ Gruber, Th.⁵ Waag, A.⁶

24
- 0032069766
- Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition
- DOI 10.1063/1.121268, PII S0003695198017185
- P. J. Hansen, Y. E. Strausser, A. N. Erickson, E. J. Tarsa, P. Kozodoy, E. G. Brazel, J. P. Ibbetson, U. Mishra, V. Narayanamurti, S. P. DenBaars, and J. S. Speck, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.121268 72, 2247 (1998). (Pubitemid 128671523)
- (1998) Applied Physics Letters , vol.72 , Issue.18 , pp. 2247-2249
- Hansen, P.J.¹ Strausser, Y.E.² Erickson, A.N.³ Tarsa, E.J.⁴ Kozodoy, P.⁵ Brazel, E.G.⁶ Ibbetson, J.P.⁷ Mishra, U.⁸ Narayanamurti, V.⁹ DenBaars, S.P.¹⁰ Speck, J.S.¹¹

25
- 0037425227
- APPLAB 0003-6951 10.1063/1.1565687
- A. Krtschil, A. Dadgar, and A. Krost, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1565687 82, 2263 (2003).
- (2003) Appl. Phys. Lett. , vol.82 , pp. 2263
- Krtschil, A.¹ Dadgar, A.² Krost, A.³

26
- 10844233000
- Effects of extended dislocations on charge distribution in GaN epilayer
- DOI 10.1016/j.mejo.2004.10.005, PII S0026269204001442
- H. Choi, E. K. Koh, Y. M. Cho, J. Jin, D. Byun, and M. Yoon, Microelectron. J. MICEB9 0026-2692 10.1016/j.mejo.2004.10.005 36, 25 (2005). (Pubitemid 40003372)
- (2005) Microelectronics Journal , vol.36 , Issue.1 , pp. 25-28
- Choi, H.¹ Koh, E.K.² Cho, Y.M.³ Jin, J.⁴ Byun, D.⁵ Yoon, M.⁶

27
- 60349107574
- APPLAB 0003-6951 10.1063/1.3073741
- P. Ebert, L. Ivanova, S. Borisova, H. Eisele, A. Laubsch, and M. Dähne, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3073741 94, 062104 (2009).
- (2009) Appl. Phys. Lett. , vol.94 , pp. 062104
- Ebert, P.¹ Ivanova, L.² Borisova, S.³ Eisele, H.⁴ Laubsch, A.⁵ Dähne, M.⁶

28
- 79955990967
- Donor and acceptor concentrations in degenerate InN
- DOI 10.1063/1.1432742
- D. C. Look, H. Lu, W. J. Schaff, J. Jasinski, and Z. Liliental-Weber, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1432742 80, 258 (2002). (Pubitemid 34104594)
- (2002) Applied Physics Letters , vol.80 , Issue.2 , pp. 258
- Look, D.C.¹ Lu, H.² Schaff, W.J.³ Jasinski, J.⁴ Liliental-Weber, Z.⁵

29
- 33750172792
- Effect of dislocation scattering on the transport properties of InN grown on GaN substrates by molecular beam epitaxy
- DOI 10.1063/1.2364456
- K. A. Wang, Y. Cao, J. Simon, J. Zhang, A. Mintairov, J. Merz, D. Hall, T. Kosel, and D. Jena, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2364456 89, 162110 (2006). (Pubitemid 44601689)
- (2006) Applied Physics Letters , vol.89 , Issue.16 , pp. 162110
- Wang, K.¹ Cao, Y.² Simon, J.³ Zhang, J.⁴ Mintairov, A.⁵ Merz, J.⁶ Hall, D.⁷ Kosel, T.⁸ Jena, D.⁹

30
- 40149090329
- Effects of dislocations on electron transport in wurtzite InN
- DOI 10.1063/1.2840051
- X.-G. Yu and X.-G. Liang, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2840051 103, 043707 (2008). (Pubitemid 351327518)
- (2008) Journal of Applied Physics , vol.103 , Issue.4 , pp. 043707
- Yu, X.-G.¹ Liang, X.-G.²

31
- 65749083519
- JCRGAE 0022-0248 10.1016/j.jcrysgro.2009.01.019
- Y. Takei and T. Nakayama, J. Cryst. Growth JCRGAE 0022-0248 10.1016/j.jcrysgro.2009.01.019 311, 2767 (2009).
- (2009) J. Cryst. Growth , vol.311 , pp. 2767
- Takei, Y.¹ Nakayama, T.²

32
- 0000149005
- APPLAB 0003-6951 10.1063/1.1318235
- H. Lu, W. J. Schaff, J. Hwang, H. Wu, W. Yeo, A. Pharkya, and L. F. Eastman, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1318235 77, 2548 (2000).
- (2000) Appl. Phys. Lett. , vol.77 , pp. 2548
- Lu, H.¹ Schaff, W.J.² Hwang, J.³ Wu, H.⁴ Yeo, W.⁵ Pharkya, A.⁶ Eastman, L.F.⁷

33
- 0347609008
- APPLAB 0003-6951 10.1063/1.1402649
- H. Lu, W. J. Schaff, J. Hwang, H. Wu, G. Koley, and L. F. Eastman, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1402649 79, 1489 (2001).
- (2001) Appl. Phys. Lett. , vol.79 , pp. 1489
- Lu, H.¹ Schaff, W.J.² Hwang, J.³ Wu, H.⁴ Koley, G.⁵ Eastman, L.F.⁶

34
- 34848851898
- A growth diagram for plasma-assisted molecular beam epitaxy of In-face InN
- DOI 10.1063/1.2781319
- C. S. Gallinat, G. Koblmüller, J. S. Brown, and J. S. Speck, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2781319 102, 064907 (2007). (Pubitemid 47509002)
- (2007) Journal of Applied Physics , vol.102 , Issue.6 , pp. 064907
- Gallinat, C.S.¹ Koblmuller, G.² Brown, J.S.³ Speck, J.S.⁴

35
- 34247622394
- Surface kinetics and thermal instability of N-face InN grown by plasma-assisted molecular beam epitaxy
- DOI 10.1063/1.2718884
- G. Koblmüller, C. S. Gallinat, and J. S. Speck, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2718884 101, 083516 (2007). (Pubitemid 46685359)
- (2007) Journal of Applied Physics , vol.101 , Issue.8 , pp. 083516
- Koblmuller, G.¹ Gallinat, C.S.² Speck, J.S.³

36
- 53349102558
- PSSBBD 0370-1972 10.1002/pssb.200778731
- J. W. Ager, III, N. Miller, R. E. Jones, K. M. Yu, J. Wu, W. J. Schaff, and W. Walukiewicz, Phys. Status Solidi B PSSBBD 0370-1972 10.1002/pssb. 200778731 245, 873 (2008).
- (2008) Phys. Status Solidi B , vol.245 , pp. 873
- Ager Iii, J.W.¹ Miller, N.² Jones, R.E.³ Yu, K.M.⁴ Wu, J.⁵ Schaff, W.J.⁶ Walukiewicz, W.⁷

37
- 80052503298
- Ph.D. thesis, University of California, Berkeley
- N. Miller, Ph.D. thesis, University of California, Berkeley, 2010.
- (2010)
- Miller, N.¹

38
- 0014835459
- 1098-0121 10.1103/PhysRevB.2.1012
- D. L. Rode, Phys. Rev. B 1098-0121 10.1103/PhysRevB.2.1012 2, 1012 (1970).
- (1970) Phys. Rev. B , vol.2 , pp. 1012
- Rode, D.L.¹

39
- 0002531092
- in edited by R. K. Willardson and A. C. Beer (Academic Press, New York
- D. L. Rode, in Semiconductors and Semimetals, edited by, R. K. Willardson, and, A. C. Beer, (Academic Press, New York, 1975), Vol. 10, pp. 1-89.
- (1975) Semiconductors and Semimetals , vol.10 , pp. 1-89
- Rode, D.L.¹

40
- 0037113398
- PRBMDO 1098-0121 10.1103/PhysRevB.66.201403
- J. Wu, W. Walukiewicz, W. Shan, K. M. Yu, J. W. Ager, III, E. E. Haller, H. Lu, and W. J. Schaff, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.66. 201403 66, 201403 (2002).
- (2002) Phys. Rev. B , vol.66 , pp. 201403
- Wu, J.¹ Walukiewicz, W.² Shan, W.³ Yu, K.M.⁴ Ager Iii, J.W.⁵ Haller, E.E.⁶ Lu, H.⁷ Schaff, W.J.⁸

41
- 4944252819
- APPLAB 0003-6951 10.1063/1.1787615
- S. P. Fu and Y. F. Chen, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1787615 85, 1523 (2004).
- (2004) Appl. Phys. Lett. , vol.85 , pp. 1523
- Fu, S.P.¹ Chen, Y.F.²

42
- 43049113144
- Phonon polariton of InN observed by infrared synchrotron radiation
- DOI 10.1063/1.2918848
- T. Inushima, K. Fukui, H. Lu, and W. J. Schaff, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2918848 92, 171905 (2008). (Pubitemid 351624887)
- (2008) Applied Physics Letters , vol.92 , Issue.17 , pp. 171905
- Inushima, T.¹ Fukui, K.² Lu, H.³ Schaff, W.J.⁴

43
- 0037087950
- PRBMDO 1098-0121 10.1103/PhysRevB.65.115206
- A. Kasic, M. Schubert, Y. Saito, Y. Nanishi, and G. Wagner, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.65.115206 65, 115206 (2002).
- (2002) Phys. Rev. B , vol.65 , pp. 115206
- Kasic, A.¹ Schubert, M.² Saito, Y.³ Nanishi, Y.⁴ Wagner, G.⁵

44
- 0842278614
- PRBMDO 1098-0121 10.1103/PhysRevB.68.235204
- T. Inushima, M. Higashiwaki, and T. Matsui, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.68.235204 68, 235204 (2003).
- (2003) Phys. Rev. B , vol.68 , pp. 235204
- Inushima, T.¹ Higashiwaki, M.² Matsui, T.³

45
- 33847165304
- 1(LO) phonon-plasmon coupling mode
- DOI 10.1063/1.2679926
- Y.-M. Chang, H. W. Chu, C.-H. Shen, H.-Y. Chen, and S. Gwo, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2679926 90, 072111 (2007). (Pubitemid 46280697)
- (2007) Applied Physics Letters , vol.90 , Issue.7 , pp. 072111
- Chang, Y.-M.¹ Chu, H.W.² Shen, C.-H.³ Chen, H.-Y.⁴ Gwo, S.⁵

46
- 35348841526
- Electron mobility in InN and III-N alloys
- DOI 10.1063/1.2785005
- L. Hsu, R. E. Jones, S. X. Li, K. M. Yu, and W. Walukiewicz, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2785005 102, 073705 (2007). (Pubitemid 47587826)
- (2007) Journal of Applied Physics , vol.102 , Issue.7 , pp. 073705
- Hsu, L.¹ Jones, R.E.² Li, S.X.³ Yu, K.M.⁴ Walukiewicz, W.⁵

47
- 67649170477
- PSSBBD 0370-1972 10.1002/pssb.200880924
- P. Schley, R. Goldhahn, G. Gobsch, M. Feneberg, K. Thonke, X. Wang, and A. Yoshikawa, Phys. Status Solidi B PSSBBD 0370-1972 10.1002/pssb.200880924 246, 1177 (2009).
- (2009) Phys. Status Solidi B , vol.246 , pp. 1177
- Schley, P.¹ Goldhahn, R.² Gobsch, G.³ Feneberg, M.⁴ Thonke, K.⁵ Wang, X.⁶ Yoshikawa, A.⁷

48
- 64249101572
- RPPHAG 0034-4885 10.1088/0034-4885/72/3/036502
- M. A. Moram and M. E. Vickers, Rep. Prog. Phys. RPPHAG 0034-4885 10.1088/0034-4885/72/3/036502 72, 036502 (2009).
- (2009) Rep. Prog. Phys. , vol.72 , pp. 036502
- Moram, M.A.¹ Vickers, M.E.²

49
- 0003624373
- Springer, New York
- K. Seeger, Semiconductor Physics (Springer, New York, 2002).
- (2002) Semiconductor Physics
- Seeger, K.¹

50
- 33645160394
- 0921-4526 10.1016/j.physb.2005.12.112
- R. E. Jones, S. X. Li, L. Hsu, K. M. Yu, W. Walukiewicz, Z. Liliental-Weber, J. W. Ager, III, E. E. Haller, H. Lu, and W. J. Schaff, Physica B 0921-4526 10.1016/j.physb.2005.12.112 366-377, 436 (2006).
- (2006) Physica B , vol.366-377 , pp. 436
- Jones, R.E.¹ Li, S.X.² Hsu, L.³ Yu, K.M.⁴ Walukiewicz, W.⁵ Liliental-Weber, Z.⁶ Ager Iii, J.W.⁷ Haller, E.E.⁸ Lu, H.⁹ Schaff, W.J.¹⁰

51
- 0036670894
- Determination by electron holography of the electronic charge distribution at threading dislocations in epitaxial GaN
- DOI 10.1002/1521-396X(200208)192:2<407::AID-PSSA407>3.0.CO;2-M
- J. Cai and F. A. Ponce, Phys. Status Solidi A PSSABA 0031-8965 10.1002/1521-396X(200208)192:2<407::AID-PSSA407>3.0.CO;2-M 192, 407 (2002). (Pubitemid 34993246)
- (2002) Physica Status Solidi (A) Applied Research , vol.192 , Issue.2 , pp. 407-411
- Cai, J.¹ Ponce, F.A.²

52
- 33645527344
- PRLTAO 0031-9007 10.1103/PhysRevLett.96.125505
- R. E. Jones, K. M. Yu, S. X. Li, W. Walukiewicz, J. W. Ager, III, E. E. Haller, H. Lu, and W. J. Schaff, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.96.125505 96, 125505 (2006).
- (2006) Phys. Rev. Lett. , vol.96 , pp. 125505
- Jones, R.E.¹ Yu, K.M.² Li, S.X.³ Walukiewicz, W.⁴ Ager Iii, J.W.⁵ Haller, E.E.⁶ Lu, H.⁷ Schaff, W.J.⁸

53
- 67650245456
- JAPIAU 0021-8979 10.1063/1.3153942
- L. H. Dmowski, M. Baj, T. Suski, J. Przybytek, R. Czernecki, X. Wang, A. Yoshikawa, H. Lu, W. J. Schaff, D. Muto, and Y. Nanishi, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.3153942 105, 123713 (2009).
- (2009) J. Appl. Phys. , vol.105 , pp. 123713
- Dmowski, L.H.¹ Baj, M.² Suski, T.³ Przybytek, J.⁴ Czernecki, R.⁵ Wang, X.⁶ Yoshikawa, A.⁷ Lu, H.⁸ Schaff, W.J.⁹ Muto, D.¹⁰ Nanishi, Y.¹¹

54
- 77953623658
- JAPIAU 0021-8979 10.1063/1.3427564
- N. Miller, J. W. Ager, III, H. M. Smith, III, M. A. Mayer, K. M. Yu, E. E. Haller, W. Walukiewicz, W. J. Schaff, C. Gallinat, G. Koblmüller, and J. S. Speck, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.3427564 107, 113712 (2010).
- (2010) J. Appl. Phys. , vol.107 , pp. 113712
- Miller, N.¹ Ager Iii, J.W.² Smith Iii, H.M.³ Mayer, M.A.⁴ Yu, K.M.⁵ Haller, E.E.⁶ Walukiewicz, W.⁷ Schaff, W.J.⁸ Gallinat, C.⁹ Koblmüller, G.¹⁰ Speck, J.S.¹¹

55
- 84985574468
- PSSBBD 0370-1972 10.1002/pssb.19660160264
- B. Pödör, Phys. Status Solidi B PSSBBD 0370-1972 10.1002/pssb.19660160264 16, K167 (1966).
- (1966) Phys. Status Solidi B , vol.16 , pp. 167
- Pödör, B.¹

56
- 0009315151
- V. L. Bonch-Bruevich and V. B. Glasko, Fiz. Tverd. Tela 3, 36 (1961).
- (1961) Fiz. Tverd. Tela , vol.3 , pp. 36
- Bonch-Bruevich, V.L.¹ Glasko, V.B.²

57
- 30244514592
- JPCSAW 0022-3697 10.1016/0022-3697(57)90013-6
- E. O. Kane, J. Phys. Chem. Solids JPCSAW 0022-3697 10.1016/0022-3697(57) 90013-6 1, 249 (1957).
- (1957) J. Phys. Chem. Solids , vol.1 , pp. 249
- Kane, E.O.¹

58
- 0344024383
- PRBMDO 1098-0121 10.1103/PhysRevB.3.3287
- D. L. Rode, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.3.3287 3, 3287 (1971).
- (1971) Phys. Rev. B , vol.3 , pp. 3287
- Rode, D.L.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.