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Volumn 302-303, Issue , 2001, Pages 123-134

Intrinsic limitations to the doping of wide-gap semiconductors

Author keywords

Compound semiconductors; Doping; Native defects

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL DEFECTS; ENERGY GAP; MATHEMATICAL MODELS; SEMICONDUCTOR DOPING;

EID: 18544407214     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00417-3     Document Type: Conference Paper
Times cited : (341)

References (75)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.