Vacancy-type defects in Mg-doped InN probed by means of positron annihilation

Journal of Applied Physics

Volumn 105, Issue 5, 2009, Pages

  Uedono, A ^a   Nakamori, H ^a   Narita, K ^a   Suzuki, J ^a   Wang, X ^b   Che, S B ^b   Ishitani, Y ^b   Yoshikawa, A ^b   Ishibashi, S ^c  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b CHIBA UNIVERSITY   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; DEFECTS; DOPING (ADDITIVES); ELECTRONS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; POINT DEFECTS; POSITRON ANNIHILATION; POSITRON ANNIHILATION SPECTROSCOPY; RADIATION DAMAGE; SECONDARY BATTERIES; SURFACE DEFECTS;

ANNIHILATION RADIATIONS; CAPACITANCE VOLTAGES; CONCENTRATION OF; CONDUCTION TYPES; DOPPLER BROADENING SPECTRUM; ELECTRON CONCENTRATIONS; GAN/SAPPHIRE; MG CONCENTRATIONS; MG-DOPED; MG-DOPING; MONOENERGETIC POSITRON BEAMS; P TYPES; PLASMA-ASSISTED MOLECULAR BEAM EPITAXIES; POSITIVELY CHARGED; POSITRON ANNIHILATION PARAMETERS; POSITRON TRAPPING CENTERS; VACANCY CLUSTERS; VACANCY-TYPE DEFECTS;

VACANCIES;

EID: 62549145776     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3075907     Document Type: Article

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