In situ observation of coalescence-related tensile stresses during metalorganic chemical vapor deposition of GaN on sapphire

Applied Physics Letters

Volumn 86, Issue 26, 2005, Pages 1-3

  Raghavan, Srinivasan ^a   Acord, Jeremy ^a   Redwing, Joan M ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MULTI-BEAM OPTICAL STRESS SENSORS (MOSS); SAPPHIRE SUBSTRATES; SOLID-GAS INTERFACES; SOLID-SOLID INTERFACES;

ALUMINUM NITRIDE; COALESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; OPTICAL SENSORS; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; STRESS CONCENTRATION; SURFACE ROUGHNESS; TENSILE STRESS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

GALLIUM NITRIDE;

EID: 22144463867     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1968436     Document Type: Article

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