Hydrogen induced redox mechanism in amorphous carbon resistive random access memory

Nanoscale Research Letters

Volumn 9, Issue 1, 2014, Pages 1-5

  Chen, Yi Jiun ^a   Chen, Hsin Lu ^a   Young, Tai Fa ^a   Chang, Ting Chang ^a   Tsai, Tsung Ming ^a   Chang, Kuan Chang ^a   Zhang, Rui ^b   Chen, Kai Huang ^c   Lou, Jen Chung ^b   Chu, Tian Jian ^a   Chen, Jung Hui ^d   Bao, Ding Hua ^e   Sze, Simon M ^a,f  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b PEKING UNIVERSITY   (China)

^c TUNG FANG DESIGN UNIVERSITY   (Taiwan)

^d NATIONAL KAOHSIUNG NORMAL UNIVERSITY   (Taiwan)

^e SUN YAT SEN UNIVERSITY   (China)

^f Stanford University   (United States)

Author keywords

Carbon; Conjugation double bond; Hydrogen redox; RRAM

Indexed keywords

CARBON; HOLE MOBILITY; HYDROGEN; RRAM;

AMORPHOUS CARBON LAYER; CONDUCTIVE FILAMENTS; DOUBLE BONDS; ELECTRICAL CONDUCTION; ELECTRICAL CONDUCTION MECHANISMS; HYDROGENATION PROCESS; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE RANDOM ACCESS MEMORY (RRAM);

AMORPHOUS CARBON;

EID: 84897805430     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-9-52     Document Type: Article

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