Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process

Applied Physics Letters

Volumn 103, Issue 8, 2013, Pages

  Chang, Kuan Chang ^a   Tsai, Tsung Ming ^a   Zhang, Rui ^b   Chang, Ting Chang ^a,c   Chen, Kai Huang ^d   Chen, Jung Hui ^e   Young, Tai Fa ^a   Lou, J C ^b   Chu, Tian Jian ^a   Shih, Chih Cheng ^e   Pan, Jhih Hong ^a   Su, Yu Ting ^a   Syu, Yong En ^a   Tung, Cheng Wei ^a   Chen, Min Chen ^a   Wu, Jia Jie ^f   Hu, Ying ^f   Sze, Simon M ^g  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b PEKING UNIVERSITY   (China)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^d TUNG FANG DESIGN UNIVERSITY   (Taiwan)

^e NATIONAL KAOHSIUNG NORMAL UNIVERSITY   (Taiwan)

^f XIDIAN UNIVERSITY   (China)

^g NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING INTENSITY; CHEMICAL COMPOSITIONS; CURRENT VOLTAGE CURVE; ELECTRICAL CONDUCTION MECHANISMS; HOPPING CONDUCTION; LOW-RESISTANCE STATE; LOW-TEMPERATURE MEASUREMENTS; RESISTANCE RANDOM ACCESS MEMORY;

CARBON DIOXIDE; TEMPERATURE; TEMPERATURE MEASUREMENT;

ZINC;

EID: 84883421119     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4819162     Document Type: Article

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