Hopping effect of hydrogen-doped silicon oxide insert RRAM by supercritical CO2 fluid treatment

IEEE Electron Device Letters

Volumn 34, Issue 5, 2013, Pages 617-619

  Chang, Kuan Chang ^a   Pan, Chih Hung ^a   Chang, Ting Chang ^a,b   Tsai, Tsung Ming ^a   Zhang, Rui ^c   Lou, Jen Chung ^a,c   Young, Tai Fa ^a   Chen, Jung Hui ^a,b   Shih, Chih Cheng ^d   Chu, Tian Jian ^e   Chen, Jian Yu ^e   Su, Yu Ting ^a,b   Jiang, Jhao Ping ^a   Chen, Kai Huang ^d   Huang, Hui Chun ^a   Syu, Yong En ^a,b   Gan, Der Shin ^a   Sze, Simon M ^f  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c PEKING UNIVERSITY   (China)

^d NATIONAL KAOHSIUNG NORMAL UNIVERSITY   (Taiwan)

^e TUNG FANG INSTITUTE OF TECHNOLOGY   (Taiwan)

^f NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Hopping conduction; resistive random access memory (RRAM); supercritical fluid

Indexed keywords

CURRENT CONDUCTION MECHANISMS; HOPPING CONDUCTION; LOW-RESISTANCE STATE; REDUCTION REACTION; RESISTIVE RANDOM ACCESS MEMORY (RRAM); RESISTIVE SWITCHING; SUPERCRITICAL CARBON DIOXIDES; SUPERCRITICAL CO;

CARBON DIOXIDE; EFFLUENT TREATMENT; IONS; SILICON OXIDES; SUPERCRITICAL FLUID EXTRACTION; SUPERCRITICAL FLUIDS; TITANIUM;

HYDROGEN;

EID: 84876984172     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2251995     Document Type: Article

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