Origin of hopping conduction in Sn-doped silicon oxide RRAM with supercritical CO2 fluid treatment

IEEE Electron Device Letters

Volumn 33, Issue 12, 2012, Pages 1693-1695

  Tsai, Tsung Ming ^a   Chang, Kuan Chang ^a   Chang, Ting Chang ^a,b   Chang, Geng Wei ^c   Syu, Yong En ^a,b   Su, Yu Ting ^a,b   Liu, Guan Ru ^a,b   Liao, Kuo Hsiao ^a   Chen, Min Chen ^a,b   Huang, Hui Chun ^a   Tai, Ya Hsiang ^c   Gan, Der Shin ^a   Ye, Cong ^d   Wang, Hao ^d   Sze, Simon M ^a,c  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d HUBEI UNIVERSITY   (China)

Author keywords

Hopping conduction; hydration dehydration reaction; resistance random access memory (RRAM); supercritical fluid

Indexed keywords

CURRENT CONDUCTION MECHANISMS; FLUID TREATMENTS; HOPPING CONDUCTION; HYDRATION-DEHYDRATION REACTION; LOW-RESISTANCE STATE; OHMIC CONDUCTION; REACTION MODEL; RESISTANCE RANDOM ACCESS MEMORY; RESISTIVE RANDOM ACCESS MEMORY; SN-DOPED; SUPERCRITICAL CO; SUPERCRITICAL FLUID TECHNOLOGY;

CARBON DIOXIDE; DEHYDRATION; EFFLUENT TREATMENT; HYDRATION; NONVOLATILE STORAGE; PHOTOELECTRONS; SILICON OXIDES; SUPERCRITICAL FLUIDS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

TIN;

EID: 84870444142     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2217932     Document Type: Article

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