Retraction notice to “Improvement Mechanism of resistance random access memory with supercritical CO2 fluid treatment” [J. Supercrit. Fluids, Volume 85, January 2014, Pages 183–189] (The Journal of Supercritical Fluids (2014) 85 (183–189), (S0896844613003045), (10.1016/j.supflu.2013.09.002));Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment

Journal of Supercritical Fluids

Volumn 85, Issue , 2014, Pages 183-189

  Chang, Kuan Chang ^a   Chen, Jung Hui ^b   Tsai, Tsung Ming ^a   Chang, Ting Chang ^a,g   Huang, Syuan Yong ^a   Zhang, Rui ^c   Chen, Kai Huang ^d   Syu, Yong En ^a   Chang, Geng Wei ^e   Chu, Tian Jian ^a   Liu, Guan Ru ^a   Su, Yu Ting ^a   Chen, Min Chen ^a   Pan, Jhih Hong ^a   Liao, Kuo Hsiao ^a   Tai, Ya Hsiang ^e   Young, Tai Fa ^f   Sze, Simon M ^a,e   Ai, Chi Fong ^h   Wang, Min Chuan ^h   Huang, Jen Wei ⁱ   more..

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL KAOHSIUNG NORMAL UNIVERSITY   (Taiwan)

^c PEKING UNIVERSITY   (China)

^d Tung Fang Design Institute   (Taiwan)

^e NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^f Department of Mechanical and Electro Mechanical Engineering ^*  (Taiwan)

^g NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^h INSTITUTE OF NUCLEAR ENERGY RESEARCH   (Taiwan)

ⁱ DEPARTMENT OF PHYSICS   (Taiwan)

Author keywords

Hydration dehydration reaction; RRAM; Supercritical fluid; Tin doping

Indexed keywords

CARBON DIOXIDE; DANGLING BONDS; DEHYDRATION; EFFLUENT TREATMENT; HYDRATION; RRAM; SEMICONDUCTOR DOPING; SILICON COMPOUNDS; SILICON OXIDES; SUPERCRITICAL FLUIDS; THIN FILMS; TIN OXIDES;

CURRENT CONDUCTION MECHANISMS; FRENKEL-POOLE CONDUCTION; HIGH-RESISTANCE STATE; HYDRATION DEHYDRATIONS; IMPROVEMENT MECHANISM; LOW-RESISTANCE STATE; RESISTANCE RANDOM ACCESS MEMORY; SUPERCRITICAL FLUID TREATMENTS;

RANDOM ACCESS STORAGE;

EID: 84897821708     PISSN: 08968446     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.supflu.2021.105350     Document Type: Erratum

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